$GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 \mu m at Room Temperature$

GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 \mu m at Room Temperature

We have investigated the potential of GaSb-based lasers for emission at 1.55 μm and monolithic integration on silicon. We designed an active region based on strained Ga 0.8 In 0.2 Sb quantum-wells aiming a good carrier confinement. To validate this design, the active region was first used in edge-em...

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Veröffentlicht in:	IEEE photonics technology letters 2010-04, Vol.22 (8), p.553-555
Hauptverfasser:	Cerutti, L., Rodriguez, J. B., Tournie, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Antimonide Capacitive sensors Carrier confinement Conferences Density Fiber optics GaInSb quantum well (QW) Gallium Gas lasers GaSb substrate Lasers Monolithic integrated circuits monolithic integration Optical design Optical fibers Physics Quantum well lasers Quantum wells Semiconductor lasers Silicon silicon substrate Silicon substrates Substrates Temperature
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