GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 \mu m at Room Temperature
We have investigated the potential of GaSb-based lasers for emission at 1.55 μm and monolithic integration on silicon. We designed an active region based on strained Ga 0.8 In 0.2 Sb quantum-wells aiming a good carrier confinement. To validate this design, the active region was first used in edge-em...
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| Veröffentlicht in: | IEEE photonics technology letters 2010-04, Vol.22 (8), p.553-555 |
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| container_end_page | 555 |
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| container_title | IEEE photonics technology letters |
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| creator | Cerutti, L. Rodriguez, J. B. Tournie, E. |
| description | We have investigated the potential of GaSb-based lasers for emission at 1.55 μm and monolithic integration on silicon. We designed an active region based on strained Ga 0.8 In 0.2 Sb quantum-wells aiming a good carrier confinement. To validate this design, the active region was first used in edge-emitting lasers grown on GaSb substrates. Continuous-wave operation at 1.56 μm has been achieved up to 45°C. The same laser structure grown on Si substrate showed room-temperature operation in pulsed regime at 1.55 μm with a threshold current density of 5 kA/cm 2 . |
| doi_str_mv | 10.1109/LPT.2010.2042591 |
| format | Article |
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B.</creatorcontrib><creatorcontrib>Tournie, E.</creatorcontrib><title>GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 \mu m at Room Temperature</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>We have investigated the potential of GaSb-based lasers for emission at 1.55 μm and monolithic integration on silicon. We designed an active region based on strained Ga 0.8 In 0.2 Sb quantum-wells aiming a good carrier confinement. To validate this design, the active region was first used in edge-emitting lasers grown on GaSb substrates. Continuous-wave operation at 1.56 μm has been achieved up to 45°C. The same laser structure grown on Si substrate showed room-temperature operation in pulsed regime at 1.55 μm with a threshold current density of 5 kA/cm 2 .</description><subject>Antimonide</subject><subject>Capacitive sensors</subject><subject>Carrier confinement</subject><subject>Conferences</subject><subject>Density</subject><subject>Fiber optics</subject><subject>GaInSb quantum well (QW)</subject><subject>Gallium</subject><subject>Gas lasers</subject><subject>GaSb substrate</subject><subject>Lasers</subject><subject>Monolithic integrated circuits</subject><subject>monolithic integration</subject><subject>Optical design</subject><subject>Optical fibers</subject><subject>Physics</subject><subject>Quantum well lasers</subject><subject>Quantum wells</subject><subject>Semiconductor lasers</subject><subject>Silicon</subject><subject>silicon substrate</subject><subject>Silicon substrates</subject><subject>Substrates</subject><subject>Temperature</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEtLxDAUhYso-NwLbrITwY73Js20Weqgo1BRdNwJIZOmGmmbMWkV_70pM8zmvvjOgXuS5BRhggjiqnxeTCjEjUJGucCd5ABFhilgnu3GGeKMyPh-chjCFwBmnGUHycdcvS7TGxVMRcpY_SV5dJ1rbP9ptWqaPzL37rcjriOvtrF67MMy9F715pLctrbvbfdBVE9wwjl5bwfSjtuLcy1ZmHZlIjl4c5zs1aoJ5mTTj5K3u9vF7D4tn-YPs-sy1YzyPkWGS-QgtK7BCD1lWcGKqtCCmazSuSqmCCyvhKBaV6I2RaVwqStaa6qAxZeOkou176dq5MrbVvk_6ZSV99elHG8AnAmK8IORPV-zK---BxN62dqgTdOozrghyJyznPKcskjCmtTeheBNvbVGkGP8MsYvx_jlJv4oOVtLrDFmi_MMBeCU_QOPo373</recordid><startdate>20100415</startdate><enddate>20100415</enddate><creator>Cerutti, L.</creator><creator>Rodriguez, J. 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B. ; Tournie, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c325t-131b1509ccf0e9c634838d8c93e4dc7a861037d992ccd9fe8da1bcd2fc2a03453</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Antimonide</topic><topic>Capacitive sensors</topic><topic>Carrier confinement</topic><topic>Conferences</topic><topic>Density</topic><topic>Fiber optics</topic><topic>GaInSb quantum well (QW)</topic><topic>Gallium</topic><topic>Gas lasers</topic><topic>GaSb substrate</topic><topic>Lasers</topic><topic>Monolithic integrated circuits</topic><topic>monolithic integration</topic><topic>Optical design</topic><topic>Optical fibers</topic><topic>Physics</topic><topic>Quantum well lasers</topic><topic>Quantum wells</topic><topic>Semiconductor lasers</topic><topic>Silicon</topic><topic>silicon substrate</topic><topic>Silicon substrates</topic><topic>Substrates</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Cerutti, L.</creatorcontrib><creatorcontrib>Rodriguez, J. 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B.</au><au>Tournie, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 \mu m at Room Temperature</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2010-04-15</date><risdate>2010</risdate><volume>22</volume><issue>8</issue><spage>553</spage><epage>555</epage><pages>553-555</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>We have investigated the potential of GaSb-based lasers for emission at 1.55 μm and monolithic integration on silicon. We designed an active region based on strained Ga 0.8 In 0.2 Sb quantum-wells aiming a good carrier confinement. To validate this design, the active region was first used in edge-emitting lasers grown on GaSb substrates. Continuous-wave operation at 1.56 μm has been achieved up to 45°C. 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| ispartof | IEEE photonics technology letters, 2010-04, Vol.22 (8), p.553-555 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Antimonide Capacitive sensors Carrier confinement Conferences Density Fiber optics GaInSb quantum well (QW) Gallium Gas lasers GaSb substrate Lasers Monolithic integrated circuits monolithic integration Optical design Optical fibers Physics Quantum well lasers Quantum wells Semiconductor lasers Silicon silicon substrate Silicon substrates Substrates Temperature |
| title | GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 \mu m at Room Temperature |
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