Fabrication and improved characteristics of self-aligned dual-gate single-electron transistors

Single-electron transistors (SETs) have been expected to become one of the promising devices in future ultra-low power and high-density systems. Especially, silicon based SETs have advantages in the fabrication and design of SET and MOSFET hybrid circuits. Due to its potential, lots of research has...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Dong-Seup Lee, Sangwoo Kang, Kwon-Chil Kang, Joung-Eob Lee, Hong-Seon Yang, Jung Han Lee, Sang Hyuk Park, Jung Hoon Lee, Jong-Duk Lee, Hyungcheol Shin, Byung-Gook Park
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS process Controllability Fabrication MOSFET circuits Quantum capacitance Quantum dots Silicon Single electron transistors Size control Tunneling
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