Improvement of a-Si:H and nc-Si:H multi-junction solar cells by optimization of textured back reflectors
The effect of the texture of Ag/ZnO back reflector (BR) on nc-Si:H single-junction solar cell performance has been investigated systematically. Using a high textured BR, a 74% gain in short circuit current density (J sc ) was obtained over a cell made using the same recipe on specular stainless stee...
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| creator | Guozhen Yue Baojie Yan Sivec, L. Owens, J.M. Hu, S. Xixiang Xu Yang, J. Guha, S. |
| description | The effect of the texture of Ag/ZnO back reflector (BR) on nc-Si:H single-junction solar cell performance has been investigated systematically. Using a high textured BR, a 74% gain in short circuit current density (J sc ) was obtained over a cell made using the same recipe on specular stainless steel. However, the texture reduced the fill factor (FF) from 0.73 to 0.54. Dark current versus voltage measurements showed a significant increase in reverse saturate current when the texture is increased, indicating a poor nc-Si:H material quality in the nc-Si:H cells deposited on highly textured Ag/ZnO BR. In order to maintain both high J sc and FF, we have optimized the BR texture. With the improved BR, we have achieved initial efficiencies of 9.5% in a nc-Si:H single-junction and 13.4% in an a-Si:H/nc-Si:H/nc-Si:H triple-junction solar cells made at 10 ¿/s. |
| doi_str_mv | 10.1109/PVSC.2009.5411668 |
| format | Conference Proceeding |
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Using a high textured BR, a 74% gain in short circuit current density (J sc ) was obtained over a cell made using the same recipe on specular stainless steel. However, the texture reduced the fill factor (FF) from 0.73 to 0.54. Dark current versus voltage measurements showed a significant increase in reverse saturate current when the texture is increased, indicating a poor nc-Si:H material quality in the nc-Si:H cells deposited on highly textured Ag/ZnO BR. In order to maintain both high J sc and FF, we have optimized the BR texture. 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Using a high textured BR, a 74% gain in short circuit current density (J sc ) was obtained over a cell made using the same recipe on specular stainless steel. However, the texture reduced the fill factor (FF) from 0.73 to 0.54. Dark current versus voltage measurements showed a significant increase in reverse saturate current when the texture is increased, indicating a poor nc-Si:H material quality in the nc-Si:H cells deposited on highly textured Ag/ZnO BR. In order to maintain both high J sc and FF, we have optimized the BR texture. With the improved BR, we have achieved initial efficiencies of 9.5% in a nc-Si:H single-junction and 13.4% in an a-Si:H/nc-Si:H/nc-Si:H triple-junction solar cells made at 10 ¿/s.</description><subject>Atomic beams</subject><subject>Atomic force microscopy</subject><subject>Light scattering</subject><subject>Photovoltaic cells</subject><subject>Short circuit currents</subject><subject>Steel</subject><subject>Surface morphology</subject><subject>Surface texture</subject><subject>Wavelength measurement</subject><subject>Zinc oxide</subject><issn>0160-8371</issn><isbn>1424429498</isbn><isbn>9781424429493</isbn><isbn>9781424429509</isbn><isbn>1424429501</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkM1KAzEUhSNasNY-gLjJC0y9N5NkEndS1BYKCi1uSyZzB1Pnp2RSsT69ol2dc_jgWxzGbhBmiGDvXt_W85kAsDMlEbU2Z2xqC4NSSCmsAnvOrk5DWnPBxoAaMpMXOGJjIzMtAY24ZNNh2AEAWl0IwDF7X7b72H9SS13ifc1dtg73C-66inf-v7eHJoVsd-h8Cn3Hh75xkXtqmoGXR97vU2jDt_tjv4JEX-kQqeKl8x88Ut2QT30crtmods1A01NO2ObpcTNfZKuX5-X8YZUFCymrSylK6aVVRtlC5h5zKmtdOlM5iYbAaCmUqqpCW2W1EMKTwoIIqUSDkE_Y7b82ENF2H0Pr4nF7-iz_Aa6eW9c</recordid><startdate>200906</startdate><enddate>200906</enddate><creator>Guozhen Yue</creator><creator>Baojie Yan</creator><creator>Sivec, L.</creator><creator>Owens, J.M.</creator><creator>Hu, S.</creator><creator>Xixiang Xu</creator><creator>Yang, J.</creator><creator>Guha, S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200906</creationdate><title>Improvement of a-Si:H and nc-Si:H multi-junction solar cells by optimization of textured back reflectors</title><author>Guozhen Yue ; Baojie Yan ; Sivec, L. ; Owens, J.M. ; Hu, S. ; Xixiang Xu ; Yang, J. ; Guha, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-fb42b4c495859743c13ebf6ba8da418e0864255dd769596222ce517ee1eb18103</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Atomic beams</topic><topic>Atomic force microscopy</topic><topic>Light scattering</topic><topic>Photovoltaic cells</topic><topic>Short circuit currents</topic><topic>Steel</topic><topic>Surface morphology</topic><topic>Surface texture</topic><topic>Wavelength measurement</topic><topic>Zinc oxide</topic><toplevel>online_resources</toplevel><creatorcontrib>Guozhen Yue</creatorcontrib><creatorcontrib>Baojie Yan</creatorcontrib><creatorcontrib>Sivec, L.</creatorcontrib><creatorcontrib>Owens, J.M.</creatorcontrib><creatorcontrib>Hu, S.</creatorcontrib><creatorcontrib>Xixiang Xu</creatorcontrib><creatorcontrib>Yang, J.</creatorcontrib><creatorcontrib>Guha, S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Guozhen Yue</au><au>Baojie Yan</au><au>Sivec, L.</au><au>Owens, J.M.</au><au>Hu, S.</au><au>Xixiang Xu</au><au>Yang, J.</au><au>Guha, S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Improvement of a-Si:H and nc-Si:H multi-junction solar cells by optimization of textured back reflectors</atitle><btitle>2009 34th IEEE Photovoltaic Specialists Conference (PVSC)</btitle><stitle>PVSC</stitle><date>2009-06</date><risdate>2009</risdate><spage>000327</spage><epage>000332</epage><pages>000327-000332</pages><issn>0160-8371</issn><isbn>1424429498</isbn><isbn>9781424429493</isbn><eisbn>9781424429509</eisbn><eisbn>1424429501</eisbn><abstract>The effect of the texture of Ag/ZnO back reflector (BR) on nc-Si:H single-junction solar cell performance has been investigated systematically. Using a high textured BR, a 74% gain in short circuit current density (J sc ) was obtained over a cell made using the same recipe on specular stainless steel. However, the texture reduced the fill factor (FF) from 0.73 to 0.54. Dark current versus voltage measurements showed a significant increase in reverse saturate current when the texture is increased, indicating a poor nc-Si:H material quality in the nc-Si:H cells deposited on highly textured Ag/ZnO BR. In order to maintain both high J sc and FF, we have optimized the BR texture. With the improved BR, we have achieved initial efficiencies of 9.5% in a nc-Si:H single-junction and 13.4% in an a-Si:H/nc-Si:H/nc-Si:H triple-junction solar cells made at 10 ¿/s.</abstract><pub>IEEE</pub><doi>10.1109/PVSC.2009.5411668</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0160-8371 |
| ispartof | 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, p.000327-000332 |
| issn | 0160-8371 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Atomic beams Atomic force microscopy Light scattering Photovoltaic cells Short circuit currents Steel Surface morphology Surface texture Wavelength measurement Zinc oxide |
| title | Improvement of a-Si:H and nc-Si:H multi-junction solar cells by optimization of textured back reflectors |
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