Comparative study of Ga, In, and Mg doped ZnO thin-film scintillator with Geiger mode APD

Ga 25, 55, and 552 ppm doped, In 25, 53, and 141 ppm doped, Mg 1, 5, 10, 13 mol% doped ZnO thin film scintillators were grown by the Liquid Phase Epitaxy (LPE) method. Their transmittance, ¿-ray induced emission spectra were evaluated. The transmittance reached to 80% at wavelength longer than 390 n...

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Bibliographische Detailangaben

Hauptverfasser:	Yanagida, T., Fujimoto, Y., Yokota, Y., Maeo, S., Kamada, K., Yoshikawa, A., Miyamoto, M., Kobayashi, J., Tokutake, T., Sekiwa, H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Crystallization Epitaxial growth Excitons Furnaces Materials science and technology Photonic crystals Solvents Substrates Transistors Zinc oxide
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