GaN smart power chip technology

Wide-bandgap GaN-based semiconductor materials are attracting considerable attention as the preferred material for power electronics applications, owning to their superior properties including high breakdown electric-field, high carrier density, high electron mobility and high saturation velocity. I...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Chen, K.J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge carrier density Electric breakdown Electron mobility Gallium nitride GaN Integrated circuit technology power converter Power electronics Power integrated circuits Semiconductor device breakdown Semiconductor materials smart power Voltage voltage reference and planar integration Wide Bandgap
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