Temperature effects on electrical characterization of high dielectric constant substrates
In this study, the polymer/ceramic composites with high dielectric constant (HK=20 substrate) were prepared to investigate the temperature effects on electrical properties. The material properties of HK substrate were compared with those of FR4 substrate and MLCC-NPO capacitor device. Curie temperat...
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| creator | Yun-Tien Chen Shur-Fen Liu Meng-Huei Chen Chin-Hsien Hung |
| description | In this study, the polymer/ceramic composites with high dielectric constant (HK=20 substrate) were prepared to investigate the temperature effects on electrical properties. The material properties of HK substrate were compared with those of FR4 substrate and MLCC-NPO capacitor device. Curie temperature of the HK substrate could be obtained from the curves of current densities varied with temperatures. The dielectric strength of the HK substrate was higher than 200 kV/cm in the temperature range between 25°C and 125°C. The dielectric constants (DK) were slightly decreased but the dielectric losses were increased as the temperature higher than 100°C. Moreover, an effective value near 0.74 eV of the trap depth and barrier height was predicted by Frenkel-poole and Schottky-controlled process. Furthermore, Electrical properties of HK substrate after thermal treatments were also measured in this study. It was found that the variations of capacitance (¿C/C) and dielectric loss (¿DF/DF) of HK substrate were about |
| doi_str_mv | 10.1109/IMPACT.2009.5382283 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5382283</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5382283</ieee_id><sourcerecordid>5382283</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-c7eefed44698a13d26b25b50017e8898c7a17949482a64e4b86d3773d2323ef23</originalsourceid><addsrcrecordid>eNpVkLtOAzEQRc0jEiHkC9L4BzaM7dm1XUYRj0hBUGxDFXm9s8QoL9lOAV_PIgIS1VzpHJ1iGJsImAoB9nbx9DKb11MJYKelMlIadcbGVhuBEhEVSjhnQylKKEqL8uIfE-ryjykcsOvvjAWJUF2xcUrvAKBAQK8O2WtN2wNFl4-ROHUd-Zz4fsdp068YvNtwv3bR-UwxfLocerbv-Dq8rXkbfi3u97uU3S7zdGxS7nOUbtigc5tE49Mdsfr-rp4_Fsvnh8V8tiyChVx4TdRRi1hZ44RqZdXIsikBhCZjrPHaCW3RopGuQsLGVK3SuheVVNRJNWKTn2wgotUhhq2LH6vT09QX8o9a2w</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Temperature effects on electrical characterization of high dielectric constant substrates</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Yun-Tien Chen ; Shur-Fen Liu ; Meng-Huei Chen ; Chin-Hsien Hung</creator><creatorcontrib>Yun-Tien Chen ; Shur-Fen Liu ; Meng-Huei Chen ; Chin-Hsien Hung</creatorcontrib><description>In this study, the polymer/ceramic composites with high dielectric constant (HK=20 substrate) were prepared to investigate the temperature effects on electrical properties. The material properties of HK substrate were compared with those of FR4 substrate and MLCC-NPO capacitor device. Curie temperature of the HK substrate could be obtained from the curves of current densities varied with temperatures. The dielectric strength of the HK substrate was higher than 200 kV/cm in the temperature range between 25°C and 125°C. The dielectric constants (DK) were slightly decreased but the dielectric losses were increased as the temperature higher than 100°C. Moreover, an effective value near 0.74 eV of the trap depth and barrier height was predicted by Frenkel-poole and Schottky-controlled process. Furthermore, Electrical properties of HK substrate after thermal treatments were also measured in this study. It was found that the variations of capacitance (¿C/C) and dielectric loss (¿DF/DF) of HK substrate were about <±3% and <±20% respectively, after thermal cycle of 85°C for 1000 hrs. The temperature coefficient of capacitance (TCC) of HK substrate near -300 ppm/°C was also obtained as measuring temperatures range from 25 to 125°C. These results indicated that the HK substrates have excellent electrical properties to meet the applications of embedded capacitors via PCB process.</description><identifier>ISSN: 2150-5934</identifier><identifier>ISBN: 9781424443413</identifier><identifier>ISBN: 1424443415</identifier><identifier>EISSN: 2150-5942</identifier><identifier>EISBN: 9781424443420</identifier><identifier>EISBN: 1424443423</identifier><identifier>DOI: 10.1109/IMPACT.2009.5382283</identifier><identifier>LCCN: 2009902406</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitance ; Capacitors ; Ceramics ; Dielectric losses ; Dielectric measurements ; Dielectric substrates ; embedded capacitor ; high dielectric constant ; High-K gate dielectrics ; laminate ; Material properties ; polymer-ceramic hybrid ; Polymers ; Temperature distribution</subject><ispartof>2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference, 2009, p.697-700</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5382283$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,27923,54918</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5382283$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yun-Tien Chen</creatorcontrib><creatorcontrib>Shur-Fen Liu</creatorcontrib><creatorcontrib>Meng-Huei Chen</creatorcontrib><creatorcontrib>Chin-Hsien Hung</creatorcontrib><title>Temperature effects on electrical characterization of high dielectric constant substrates</title><title>2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference</title><addtitle>IMPACT</addtitle><description>In this study, the polymer/ceramic composites with high dielectric constant (HK=20 substrate) were prepared to investigate the temperature effects on electrical properties. The material properties of HK substrate were compared with those of FR4 substrate and MLCC-NPO capacitor device. Curie temperature of the HK substrate could be obtained from the curves of current densities varied with temperatures. The dielectric strength of the HK substrate was higher than 200 kV/cm in the temperature range between 25°C and 125°C. The dielectric constants (DK) were slightly decreased but the dielectric losses were increased as the temperature higher than 100°C. Moreover, an effective value near 0.74 eV of the trap depth and barrier height was predicted by Frenkel-poole and Schottky-controlled process. Furthermore, Electrical properties of HK substrate after thermal treatments were also measured in this study. It was found that the variations of capacitance (¿C/C) and dielectric loss (¿DF/DF) of HK substrate were about <±3% and <±20% respectively, after thermal cycle of 85°C for 1000 hrs. The temperature coefficient of capacitance (TCC) of HK substrate near -300 ppm/°C was also obtained as measuring temperatures range from 25 to 125°C. These results indicated that the HK substrates have excellent electrical properties to meet the applications of embedded capacitors via PCB process.</description><subject>Capacitance</subject><subject>Capacitors</subject><subject>Ceramics</subject><subject>Dielectric losses</subject><subject>Dielectric measurements</subject><subject>Dielectric substrates</subject><subject>embedded capacitor</subject><subject>high dielectric constant</subject><subject>High-K gate dielectrics</subject><subject>laminate</subject><subject>Material properties</subject><subject>polymer-ceramic hybrid</subject><subject>Polymers</subject><subject>Temperature distribution</subject><issn>2150-5934</issn><issn>2150-5942</issn><isbn>9781424443413</isbn><isbn>1424443415</isbn><isbn>9781424443420</isbn><isbn>1424443423</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkLtOAzEQRc0jEiHkC9L4BzaM7dm1XUYRj0hBUGxDFXm9s8QoL9lOAV_PIgIS1VzpHJ1iGJsImAoB9nbx9DKb11MJYKelMlIadcbGVhuBEhEVSjhnQylKKEqL8uIfE-ryjykcsOvvjAWJUF2xcUrvAKBAQK8O2WtN2wNFl4-ROHUd-Zz4fsdp068YvNtwv3bR-UwxfLocerbv-Dq8rXkbfi3u97uU3S7zdGxS7nOUbtigc5tE49Mdsfr-rp4_Fsvnh8V8tiyChVx4TdRRi1hZ44RqZdXIsikBhCZjrPHaCW3RopGuQsLGVK3SuheVVNRJNWKTn2wgotUhhq2LH6vT09QX8o9a2w</recordid><startdate>200910</startdate><enddate>200910</enddate><creator>Yun-Tien Chen</creator><creator>Shur-Fen Liu</creator><creator>Meng-Huei Chen</creator><creator>Chin-Hsien Hung</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200910</creationdate><title>Temperature effects on electrical characterization of high dielectric constant substrates</title><author>Yun-Tien Chen ; Shur-Fen Liu ; Meng-Huei Chen ; Chin-Hsien Hung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-c7eefed44698a13d26b25b50017e8898c7a17949482a64e4b86d3773d2323ef23</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Capacitance</topic><topic>Capacitors</topic><topic>Ceramics</topic><topic>Dielectric losses</topic><topic>Dielectric measurements</topic><topic>Dielectric substrates</topic><topic>embedded capacitor</topic><topic>high dielectric constant</topic><topic>High-K gate dielectrics</topic><topic>laminate</topic><topic>Material properties</topic><topic>polymer-ceramic hybrid</topic><topic>Polymers</topic><topic>Temperature distribution</topic><toplevel>online_resources</toplevel><creatorcontrib>Yun-Tien Chen</creatorcontrib><creatorcontrib>Shur-Fen Liu</creatorcontrib><creatorcontrib>Meng-Huei Chen</creatorcontrib><creatorcontrib>Chin-Hsien Hung</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yun-Tien Chen</au><au>Shur-Fen Liu</au><au>Meng-Huei Chen</au><au>Chin-Hsien Hung</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Temperature effects on electrical characterization of high dielectric constant substrates</atitle><btitle>2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference</btitle><stitle>IMPACT</stitle><date>2009-10</date><risdate>2009</risdate><spage>697</spage><epage>700</epage><pages>697-700</pages><issn>2150-5934</issn><eissn>2150-5942</eissn><isbn>9781424443413</isbn><isbn>1424443415</isbn><eisbn>9781424443420</eisbn><eisbn>1424443423</eisbn><abstract>In this study, the polymer/ceramic composites with high dielectric constant (HK=20 substrate) were prepared to investigate the temperature effects on electrical properties. The material properties of HK substrate were compared with those of FR4 substrate and MLCC-NPO capacitor device. Curie temperature of the HK substrate could be obtained from the curves of current densities varied with temperatures. The dielectric strength of the HK substrate was higher than 200 kV/cm in the temperature range between 25°C and 125°C. The dielectric constants (DK) were slightly decreased but the dielectric losses were increased as the temperature higher than 100°C. Moreover, an effective value near 0.74 eV of the trap depth and barrier height was predicted by Frenkel-poole and Schottky-controlled process. Furthermore, Electrical properties of HK substrate after thermal treatments were also measured in this study. It was found that the variations of capacitance (¿C/C) and dielectric loss (¿DF/DF) of HK substrate were about <±3% and <±20% respectively, after thermal cycle of 85°C for 1000 hrs. The temperature coefficient of capacitance (TCC) of HK substrate near -300 ppm/°C was also obtained as measuring temperatures range from 25 to 125°C. These results indicated that the HK substrates have excellent electrical properties to meet the applications of embedded capacitors via PCB process.</abstract><pub>IEEE</pub><doi>10.1109/IMPACT.2009.5382283</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 2150-5934 |
| ispartof | 2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference, 2009, p.697-700 |
| issn | 2150-5934 2150-5942 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Capacitance Capacitors Ceramics Dielectric losses Dielectric measurements Dielectric substrates embedded capacitor high dielectric constant High-K gate dielectrics laminate Material properties polymer-ceramic hybrid Polymers Temperature distribution |
| title | Temperature effects on electrical characterization of high dielectric constant substrates |
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