In Situ Simulation by RHEED of GaAs (001) ß2(2x4) Reconstructed Surface

The GaAs (001) surface is one of the most studied semiconductor surfaces and has attracted much interest of both experimentalists and theoreticians because of its importance for the growth of multilayer devices structures Several techniques have been introduced to characterize GaAs MBE growth such a...

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Bibliographische Detailangaben
Hauptverfasser:	Khachab, H., Abdelkafi, Y., Belghachi, A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Condition monitoring Diffraction Electrons Epitaxial layers GaAs Gallium arsenide growth Kinetic Monte Carlo MBE Molecular beam epitaxial growth Nonhomogeneous media rate coverage reconstruction Reflection Reflection high energy electron diffraction (RHEED) Surface morphology Surface reconstruction ß2 (2x4)
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