Comparative Study of Quick Electron Detrapping and Random Telegraph Signal and Their Dependences on Random Discrete Dopant in Sub-40-nm NAND Flash Memory
In sub-40-nm flash memory, random discrete dopant (RDD) effect modulates post program/erase (P/E) cycling V t instabilities through quick electron detrapping (QED) as well as random telegraph signal (RTS). In this letter, for the first time, we discuss the QED phenomenon and its physical origin by c...
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| Veröffentlicht in: | IEEE electron device letters 2010-02, Vol.31 (2), p.153-155 |
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| creator | Taehoon Kim Deping He Porter, R. Rivers, D. Kessenich, J. Goda, A. |
| description | In sub-40-nm flash memory, random discrete dopant (RDD) effect modulates post program/erase (P/E) cycling V t instabilities through quick electron detrapping (QED) as well as random telegraph signal (RTS). In this letter, for the first time, we discuss the QED phenomenon and its physical origin by comparison with RTS phenomenon. P/E cycling stress not only aggravates the RTS but also generates the new phenomenon of QED which results from transiently trapped charges at near-interface defects during program. By applying a new test algorithm, we could successfully extract the QED component from RTS, both of which are modulated by RDD effect and worsen tail bits in multilevel-cell flash memory. |
| doi_str_mv | 10.1109/LED.2009.2036871 |
| format | Article |
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In this letter, for the first time, we discuss the QED phenomenon and its physical origin by comparison with RTS phenomenon. P/E cycling stress not only aggravates the RTS but also generates the new phenomenon of QED which results from transiently trapped charges at near-interface defects during program. By applying a new test algorithm, we could successfully extract the QED component from RTS, both of which are modulated by RDD effect and worsen tail bits in multilevel-cell flash memory.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2009.2036871</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Algorithms ; Applied sciences ; Associate members ; Circuit properties ; Cycles ; Design. Technologies. Operation analysis. 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Solid state devices</topic><topic>Stability</topic><topic>Stress</topic><topic>Tail</topic><topic>Telegraphy</topic><topic>Tunneling</topic><topic>tunneling front model</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Taehoon Kim</creatorcontrib><creatorcontrib>Deping He</creatorcontrib><creatorcontrib>Porter, R.</creatorcontrib><creatorcontrib>Rivers, D.</creatorcontrib><creatorcontrib>Kessenich, J.</creatorcontrib><creatorcontrib>Goda, A.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Taehoon Kim</au><au>Deping He</au><au>Porter, R.</au><au>Rivers, D.</au><au>Kessenich, J.</au><au>Goda, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparative Study of Quick Electron Detrapping and Random Telegraph Signal and Their Dependences on Random Discrete Dopant in Sub-40-nm NAND Flash Memory</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2010-02-01</date><risdate>2010</risdate><volume>31</volume><issue>2</issue><spage>153</spage><epage>155</epage><pages>153-155</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>In sub-40-nm flash memory, random discrete dopant (RDD) effect modulates post program/erase (P/E) cycling V t instabilities through quick electron detrapping (QED) as well as random telegraph signal (RTS). 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| subjects | Algorithms Applied sciences Associate members Circuit properties Cycles Design. Technologies. Operation analysis. Testing Devices Digital circuits Dopants Electric, optical and optoelectronic circuits Electron traps Electronic circuits Electronics Exact sciences and technology Flash memory Flash memory (computers) Instability Integrated circuits Integrated circuits by function (including memories and processors) Modulation coding Origins quick electron detrapping (QED) random discrete dopant (RDD) effect random telegraph signal (RTS) Rivers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stability Stress Tail Telegraphy Tunneling tunneling front model |
| title | Comparative Study of Quick Electron Detrapping and Random Telegraph Signal and Their Dependences on Random Discrete Dopant in Sub-40-nm NAND Flash Memory |
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