Analysis of physics based model of AlGaN/GaN power HEMT with temperature compensation

An AlGaN/GaN high electron mobility transistor (HEMT) model with temperature compensation is proposed. The simulation and experimental data are in close agreement within the measured temperature range. Despite of drain current degradation, the characteristics exhibit high temperature compatibility o...

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Bibliographische Detailangaben

Hauptverfasser:	Huq, H.F., Polash, B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Gallium nitride HEMTs Physics Temperature
Online-Zugang:	Volltext bestellen
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