Analysis of physics based model of AlGaN/GaN power HEMT with temperature compensation

Analysis of physics based model of AlGaN/GaN power HEMT with temperature compensation

An AlGaN/GaN high electron mobility transistor (HEMT) model with temperature compensation is proposed. The simulation and experimental data are in close agreement within the measured temperature range. Despite of drain current degradation, the characteristics exhibit high temperature compatibility o...

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Hauptverfasser: Huq, H.F., Polash, B.
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Aluminum gallium nitride
Gallium nitride
HEMTs
Physics
Temperature
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description An AlGaN/GaN high electron mobility transistor (HEMT) model with temperature compensation is proposed. The simulation and experimental data are in close agreement within the measured temperature range. Despite of drain current degradation, the characteristics exhibit high temperature compatibility of AlGaN/GaN HEMTs.
doi_str_mv 10.1109/ISDRS.2009.5378298
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subjects Aluminum gallium nitride
Gallium nitride
HEMTs
Physics
Temperature
title Analysis of physics based model of AlGaN/GaN power HEMT with temperature compensation
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