Analysis of physics based model of AlGaN/GaN power HEMT with temperature compensation

Analysis of physics based model of AlGaN/GaN power HEMT with temperature compensation

An AlGaN/GaN high electron mobility transistor (HEMT) model with temperature compensation is proposed. The simulation and experimental data are in close agreement within the measured temperature range. Despite of drain current degradation, the characteristics exhibit high temperature compatibility o...

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Bibliographische Detailangaben
Hauptverfasser: Huq, H.F., Polash, B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum gallium nitride
Gallium nitride
HEMTs
Physics
Temperature
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Beschreibung
Zusammenfassung:An AlGaN/GaN high electron mobility transistor (HEMT) model with temperature compensation is proposed. The simulation and experimental data are in close agreement within the measured temperature range. Despite of drain current degradation, the characteristics exhibit high temperature compatibility of AlGaN/GaN HEMTs.
DOI:10.1109/ISDRS.2009.5378298