Vapor phase doping and sub-melt laser anneal for the fabrication of Si-based ultra-shallow junctions in sub-32 nm CMOS technology
The authors demonstrated that the combination of VPD and LA enables the fabrication of high quality, defect-free USJs with abrupt dopant profile. The results for PMOS with B-VPD are very promising for the 32 nm and the 22 nm technology nodes. In the case of NMOS, As-VPD and LA enable the fabrication...
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| creator | Nguyen, N.D. Rosseel, E. Takeuchi, S. Everaert, J.-L. Loo, R. Goossens, J. Moussa, A. Clarysse, T. Caymax, M. Vandervorst, W. |
| description | The authors demonstrated that the combination of VPD and LA enables the fabrication of high quality, defect-free USJs with abrupt dopant profile. The results for PMOS with B-VPD are very promising for the 32 nm and the 22 nm technology nodes. In the case of NMOS, As-VPD and LA enable the fabrication of an USJ but the electrical deactivation of a large part of the in-diffused dopants is responsible for the high sheet resistance values. |
| doi_str_mv | 10.1109/ISDRS.2009.5378166 |
| format | Conference Proceeding |
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Rosseel, E. ; Takeuchi, S. ; Everaert, J.-L. ; Loo, R. ; Goossens, J. ; Moussa, A. ; Clarysse, T. ; Caymax, M. ; Vandervorst, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i133t-41bbb3e193e419b60ddcabb90d02d1389e6c94c4b7a15eeccbeb9bb3ef506c483</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Atomic measurements</topic><topic>Boron</topic><topic>Chemical lasers</topic><topic>CMOS</topic><topic>CMOS technology</topic><topic>Crystalline materials</topic><topic>Doping</topic><topic>Electrical & electronics engineering</topic><topic>Engineering, computing & technology</topic><topic>Gas lasers</topic><topic>Ingénierie électrique & électronique</topic><topic>Ingénierie, informatique & technologie</topic><topic>Laser anneal</topic><topic>Materials science and technology</topic><topic>Optical device fabrication</topic><topic>Rapid thermal annealing</topic><topic>Ultra shallow junction</topic><topic>Vapor phase doping</topic><toplevel>online_resources</toplevel><creatorcontrib>Nguyen, N.D.</creatorcontrib><creatorcontrib>Rosseel, E.</creatorcontrib><creatorcontrib>Takeuchi, S.</creatorcontrib><creatorcontrib>Everaert, J.-L.</creatorcontrib><creatorcontrib>Loo, R.</creatorcontrib><creatorcontrib>Goossens, J.</creatorcontrib><creatorcontrib>Moussa, A.</creatorcontrib><creatorcontrib>Clarysse, T.</creatorcontrib><creatorcontrib>Caymax, M.</creatorcontrib><creatorcontrib>Vandervorst, W.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>Université de Liège - Open Repository and Bibliography (ORBI)</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nguyen, N.D.</au><au>Rosseel, E.</au><au>Takeuchi, S.</au><au>Everaert, J.-L.</au><au>Loo, R.</au><au>Goossens, J.</au><au>Moussa, A.</au><au>Clarysse, T.</au><au>Caymax, M.</au><au>Vandervorst, W.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Vapor phase doping and sub-melt laser anneal for the fabrication of Si-based ultra-shallow junctions in sub-32 nm CMOS technology</atitle><btitle>2009 International Semiconductor Device Research Symposium</btitle><stitle>ISDRS</stitle><date>2009-12</date><risdate>2009</risdate><spage>1</spage><epage>2</epage><pages>1-2</pages><isbn>1424460301</isbn><isbn>9781424460304</isbn><eisbn>9781424460311</eisbn><eisbn>142446031X</eisbn><abstract>The authors demonstrated that the combination of VPD and LA enables the fabrication of high quality, defect-free USJs with abrupt dopant profile. The results for PMOS with B-VPD are very promising for the 32 nm and the 22 nm technology nodes. In the case of NMOS, As-VPD and LA enable the fabrication of an USJ but the electrical deactivation of a large part of the in-diffused dopants is responsible for the high sheet resistance values.</abstract><pub>IEEE</pub><doi>10.1109/ISDRS.2009.5378166</doi><tpages>2</tpages></addata></record> |
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| identifier | ISBN: 1424460301 |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Atomic measurements Boron Chemical lasers CMOS CMOS technology Crystalline materials Doping Electrical & electronics engineering Engineering, computing & technology Gas lasers Ingénierie électrique & électronique Ingénierie, informatique & technologie Laser anneal Materials science and technology Optical device fabrication Rapid thermal annealing Ultra shallow junction Vapor phase doping |
| title | Vapor phase doping and sub-melt laser anneal for the fabrication of Si-based ultra-shallow junctions in sub-32 nm CMOS technology |
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