Design and simulation of a wideband power amplifier from 600MHz to 1000MHz
This paper presents a 15 W power amplifier's design at UHF band using lateral diffused metal-oxide semi-conductor (LDMOS) transistor MRF9030LR1. In the design, we use load-pull simulation method and parameter sweep mode in order to study the linearity characteristics in working band and the imp...
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| creator | Derui Fan Yufen Deng Zhuang Li |
| description | This paper presents a 15 W power amplifier's design at UHF band using lateral diffused metal-oxide semi-conductor (LDMOS) transistor MRF9030LR1. In the design, we use load-pull simulation method and parameter sweep mode in order to study the linearity characteristics in working band and the impact of DC bias changing. The P1dB compression characteristic figure shows that the minimum compression point is at 770 MHz, and it also demonstrates that the linearity performance at 1000 MHz are greatly influenced by non-ideal capacitor. On the other hand, with DC bias increasing, the P1dB compression point increases little at the beginning but has a great drop quickly. Based on the analysis result, we find out the key on quality control in production and therefore improve the production efficiency. |
| doi_str_mv | 10.1109/MAPE.2009.5355850 |
| format | Conference Proceeding |
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In the design, we use load-pull simulation method and parameter sweep mode in order to study the linearity characteristics in working band and the impact of DC bias changing. The P1dB compression characteristic figure shows that the minimum compression point is at 770 MHz, and it also demonstrates that the linearity performance at 1000 MHz are greatly influenced by non-ideal capacitor. On the other hand, with DC bias increasing, the P1dB compression point increases little at the beginning but has a great drop quickly. Based on the analysis result, we find out the key on quality control in production and therefore improve the production efficiency.</description><identifier>ISBN: 1424440769</identifier><identifier>ISBN: 9781424440764</identifier><identifier>DOI: 10.1109/MAPE.2009.5355850</identifier><identifier>LCCN: 2009901354</identifier><language>eng</language><publisher>IEEE</publisher><subject>Broadband amplifiers ; DC bias ; Intrusion detection ; LDMOS ; Linearity ; MOSFETs ; P1dB compression point ; Power amplifiers ; Power generation ; Power supplies ; Production ; Quality control ; Voltage</subject><ispartof>2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2009, p.1009-1011</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5355850$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,27904,54898</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5355850$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Derui Fan</creatorcontrib><creatorcontrib>Yufen Deng</creatorcontrib><creatorcontrib>Zhuang Li</creatorcontrib><title>Design and simulation of a wideband power amplifier from 600MHz to 1000MHz</title><title>2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications</title><addtitle>MAPE</addtitle><description>This paper presents a 15 W power amplifier's design at UHF band using lateral diffused metal-oxide semi-conductor (LDMOS) transistor MRF9030LR1. In the design, we use load-pull simulation method and parameter sweep mode in order to study the linearity characteristics in working band and the impact of DC bias changing. The P1dB compression characteristic figure shows that the minimum compression point is at 770 MHz, and it also demonstrates that the linearity performance at 1000 MHz are greatly influenced by non-ideal capacitor. On the other hand, with DC bias increasing, the P1dB compression point increases little at the beginning but has a great drop quickly. Based on the analysis result, we find out the key on quality control in production and therefore improve the production efficiency.</description><subject>Broadband amplifiers</subject><subject>DC bias</subject><subject>Intrusion detection</subject><subject>LDMOS</subject><subject>Linearity</subject><subject>MOSFETs</subject><subject>P1dB compression point</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Power supplies</subject><subject>Production</subject><subject>Quality control</subject><subject>Voltage</subject><isbn>1424440769</isbn><isbn>9781424440764</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tKA0EQRRskoIn5AHHTPzBj9aNmUssQo1ESdJF96KarpWVezIwE_XoTzeoe7oELV4g7BblSQA-75fs61wCUo0FcIFyJqbLaWgtlQRMxPTsCZdBei_kwfAKAoqLUYG7E6yMP6aORrglySPVX5cbUNrKN0sljCuzPomuP3EtXd1WK6USxb2tZAOw2P3JspYI_vBWT6KqB55ecif3Ter_aZNu355fVcpslgjGzFrH0qAxz4T24gMF7IoVR2eAo2qCBOIDxxBFBR82FOrWE2i1Mac1M3P_PJmY-dH2qXf99uFw3vxa3Szo</recordid><startdate>200910</startdate><enddate>200910</enddate><creator>Derui Fan</creator><creator>Yufen Deng</creator><creator>Zhuang Li</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200910</creationdate><title>Design and simulation of a wideband power amplifier from 600MHz to 1000MHz</title><author>Derui Fan ; Yufen Deng ; Zhuang Li</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-44557b513ee6bb0ad5dbb9915f14da9f4d209ed03b9ef502f2e61f4d952a83743</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Broadband amplifiers</topic><topic>DC bias</topic><topic>Intrusion detection</topic><topic>LDMOS</topic><topic>Linearity</topic><topic>MOSFETs</topic><topic>P1dB compression point</topic><topic>Power amplifiers</topic><topic>Power generation</topic><topic>Power supplies</topic><topic>Production</topic><topic>Quality control</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Derui Fan</creatorcontrib><creatorcontrib>Yufen Deng</creatorcontrib><creatorcontrib>Zhuang Li</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Derui Fan</au><au>Yufen Deng</au><au>Zhuang Li</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Design and simulation of a wideband power amplifier from 600MHz to 1000MHz</atitle><btitle>2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications</btitle><stitle>MAPE</stitle><date>2009-10</date><risdate>2009</risdate><spage>1009</spage><epage>1011</epage><pages>1009-1011</pages><isbn>1424440769</isbn><isbn>9781424440764</isbn><abstract>This paper presents a 15 W power amplifier's design at UHF band using lateral diffused metal-oxide semi-conductor (LDMOS) transistor MRF9030LR1. In the design, we use load-pull simulation method and parameter sweep mode in order to study the linearity characteristics in working band and the impact of DC bias changing. The P1dB compression characteristic figure shows that the minimum compression point is at 770 MHz, and it also demonstrates that the linearity performance at 1000 MHz are greatly influenced by non-ideal capacitor. On the other hand, with DC bias increasing, the P1dB compression point increases little at the beginning but has a great drop quickly. Based on the analysis result, we find out the key on quality control in production and therefore improve the production efficiency.</abstract><pub>IEEE</pub><doi>10.1109/MAPE.2009.5355850</doi><tpages>3</tpages></addata></record> |
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| identifier | ISBN: 1424440769 |
| ispartof | 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2009, p.1009-1011 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Broadband amplifiers DC bias Intrusion detection LDMOS Linearity MOSFETs P1dB compression point Power amplifiers Power generation Power supplies Production Quality control Voltage |
| title | Design and simulation of a wideband power amplifier from 600MHz to 1000MHz |
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