High mobility ambipolar field effect transistors made from large-scale CVD graphitic thin films

Ultrathin graphitic films containing only one or a few graphene layers have received great attention as a promising channel material to make "carbon-based" transistors, particularly for high speed and/or low power electronic devices. Back-gated or front-gated graphene field effect transist...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Helin Cao, Qingkai Yu, Childres, I., Pei, S.S., Chen, Y.P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electron optics Etching FETs Large-scale systems Nanotechnology Optical films Optical microscopy Physics computing Semiconductor films Thin film transistors
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