High mobility ambipolar field effect transistors made from large-scale CVD graphitic thin films
Ultrathin graphitic films containing only one or a few graphene layers have received great attention as a promising channel material to make "carbon-based" transistors, particularly for high speed and/or low power electronic devices. Back-gated or front-gated graphene field effect transist...
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| creator | Helin Cao Qingkai Yu Childres, I. Pei, S.S. Chen, Y.P. |
| description | Ultrathin graphitic films containing only one or a few graphene layers have received great attention as a promising channel material to make "carbon-based" transistors, particularly for high speed and/or low power electronic devices. Back-gated or front-gated graphene field effect transistors (GFET) made from exfoliated (from bulk graphite) or epitaxially-grown (by surface decomposition of SiC) graphene layers can show electron and hole mobilities approaching 104 cm2/Vs or higher. |
| doi_str_mv | 10.1109/DRC.2009.5354876 |
| format | Conference Proceeding |
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| language | eng |
| recordid | cdi_ieee_primary_5354876 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Electron optics Etching FETs Large-scale systems Nanotechnology Optical films Optical microscopy Physics computing Semiconductor films Thin film transistors |
| title | High mobility ambipolar field effect transistors made from large-scale CVD graphitic thin films |
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