Silicon cantilever beam micromachining and structure geometry characterization

A method to etch cantilever beams oriented in the direction on (100) silicon wafers is presented. Backetching of the wafer, heavily doped boron etch stop, or anodic oxidation etch stop are not necessary. The method requires only two levels of masking and uses silicon dioxide as passivation material....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Ionascu, G., Manea, E., Comeaga, C.D., Alexandrescu, N., Cernica, I., Bogatu, L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	anisotropic etching Boron bulk micromachining Etching Geometry Micromachining Oxidation Passivation Scanning electron microscopy SEM silicon cantilever Silicon compounds Structural beams Surface topography white light interferometer
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!