Heavy-Ion and Total Ionizing Dose (TID) Performance of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)

Heavy-Ion and Total Ionizing Dose (TID) Performance of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)

An MRAM is a nonvolatile memory that has been demonstrated and supports heavy ion immunity to an LET of approximately 69 MeV-cm 2 /mg for fluences to 10 8 ions/cm 2 ; and TED hardness in excess of 1 Mrad.

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Hauptverfasser: Katti, R.R., Lintz, J., Sundstrom, L., Marques, T., Scoppettuolo, S., Martin, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Insulation
Laboratories
Magnetic tunneling
Magnetization
Magnetoresistance
Nonvolatile memory
Packaging
Random access memory
Silicon
Testing
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container_start_page 103
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creator Katti, R.R.
Lintz, J.
Sundstrom, L.
Marques, T.
Scoppettuolo, S.
Martin, D.
description An MRAM is a nonvolatile memory that has been demonstrated and supports heavy ion immunity to an LET of approximately 69 MeV-cm 2 /mg for fluences to 10 8 ions/cm 2 ; and TED hardness in excess of 1 Mrad.
doi_str_mv 10.1109/REDW.2009.5336307
format Conference Proceeding
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Insulation
Laboratories
Magnetic tunneling
Magnetization
Magnetoresistance
Nonvolatile memory
Packaging
Random access memory
Silicon
Testing
title Heavy-Ion and Total Ionizing Dose (TID) Performance of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)
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