Technology-Independent Non-Quasi-Static Table-Based Nonlinear Model Generation
An analytical extraction of the non-quasi-static nonlinear lookup table FET model at mm-wave frequencies is demonstrated in this study. Frequency dispersion present at mm-wave frequencies is compensated for by introduction of higher order dynamics of nonlinear constituent components. Nonlinear charg...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2009-12, Vol.57 (12), p.2845-2852 |
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| container_title | IEEE transactions on microwave theory and techniques |
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| creator | Homayouni, S.M. Schreurs, D.M.M.-P. Crupi, G. Nauwelaers, B.K.J.C. |
| description | An analytical extraction of the non-quasi-static nonlinear lookup table FET model at mm-wave frequencies is demonstrated in this study. Frequency dispersion present at mm-wave frequencies is compensated for by introduction of higher order dynamics of nonlinear constituent components. Nonlinear charge- and current-sources are used as the constituent components to represent the nonlinear device where the higher order charge- and current-sources are introduced to compensate for the non-quasi-static effects. The presented approach is validated using SOI Multi-Fin MOSFET transistors, the multiple gate MOSFET structures which have been introduced as an alternative candidate for bulk planar CMOS technology in the nanometer regime. An accurate multibias linear model is employed as the keystone for building the non-quasi-static nonlinear model. Large-signal measurements are used for model validation. Significant improvements are observed over the quasi-static nonlinear model which is demonstrated by excellent agreement between measurements and nonlinear model presented here. |
| doi_str_mv | 10.1109/TMTT.2009.2033840 |
| format | Article |
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Frequency dispersion present at mm-wave frequencies is compensated for by introduction of higher order dynamics of nonlinear constituent components. Nonlinear charge- and current-sources are used as the constituent components to represent the nonlinear device where the higher order charge- and current-sources are introduced to compensate for the non-quasi-static effects. The presented approach is validated using SOI Multi-Fin MOSFET transistors, the multiple gate MOSFET structures which have been introduced as an alternative candidate for bulk planar CMOS technology in the nanometer regime. An accurate multibias linear model is employed as the keystone for building the non-quasi-static nonlinear model. Large-signal measurements are used for model validation. Significant improvements are observed over the quasi-static nonlinear model which is demonstrated by excellent agreement between measurements and nonlinear model presented here.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2009.2033840</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Buildings ; Circuit properties ; CMOS ; CMOS technology ; Constituents ; Current measurement ; Design. Technologies. Operation analysis. Testing ; Dispersions ; Electric, optical and optoelectronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; FETs ; FinFET transistors ; Frequency ; higher order dynamics ; Integrated circuits ; Lookup tables ; Mathematical analysis ; Mathematical model ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Microwaves ; mm-wave frequency ; MOSFET circuits ; MOSFETs ; non-quasi-static ; Nonlinear dynamical systems ; nonlinear lookup table model ; Nonlinearity ; Semiconductor device modeling ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Table lookup</subject><ispartof>IEEE transactions on microwave theory and techniques, 2009-12, Vol.57 (12), p.2845-2852</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-f56c8a9fb4b7f4285cc2334475c0542fb65cd364dbd064b8ffaced4766ae9f323</citedby><cites>FETCH-LOGICAL-c385t-f56c8a9fb4b7f4285cc2334475c0542fb65cd364dbd064b8ffaced4766ae9f323</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5332270$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5332270$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22208183$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Homayouni, S.M.</creatorcontrib><creatorcontrib>Schreurs, D.M.M.-P.</creatorcontrib><creatorcontrib>Crupi, G.</creatorcontrib><creatorcontrib>Nauwelaers, B.K.J.C.</creatorcontrib><title>Technology-Independent Non-Quasi-Static Table-Based Nonlinear Model Generation</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>An analytical extraction of the non-quasi-static nonlinear lookup table FET model at mm-wave frequencies is demonstrated in this study. Frequency dispersion present at mm-wave frequencies is compensated for by introduction of higher order dynamics of nonlinear constituent components. Nonlinear charge- and current-sources are used as the constituent components to represent the nonlinear device where the higher order charge- and current-sources are introduced to compensate for the non-quasi-static effects. The presented approach is validated using SOI Multi-Fin MOSFET transistors, the multiple gate MOSFET structures which have been introduced as an alternative candidate for bulk planar CMOS technology in the nanometer regime. An accurate multibias linear model is employed as the keystone for building the non-quasi-static nonlinear model. Large-signal measurements are used for model validation. Significant improvements are observed over the quasi-static nonlinear model which is demonstrated by excellent agreement between measurements and nonlinear model presented here.</description><subject>Applied sciences</subject><subject>Buildings</subject><subject>Circuit properties</subject><subject>CMOS</subject><subject>CMOS technology</subject><subject>Constituents</subject><subject>Current measurement</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Dispersions</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>FinFET transistors</subject><subject>Frequency</subject><subject>higher order dynamics</subject><subject>Integrated circuits</subject><subject>Lookup tables</subject><subject>Mathematical analysis</subject><subject>Mathematical model</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwaves</subject><subject>mm-wave frequency</subject><subject>MOSFET circuits</subject><subject>MOSFETs</subject><subject>non-quasi-static</subject><subject>Nonlinear dynamical systems</subject><subject>nonlinear lookup table model</subject><subject>Nonlinearity</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Table lookup</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp90UtLJDEQB_AgKzirfgDxMgirp2jenRxX8QU-ENtzSKcruy1tMiY9B7-9GWbw4MFLhVC_Kkj-CB1QckopMWftfdueMkJMLZxrQbbQjErZYKMa8gvNCKEaG6HJDvpdymu9Ckn0DD204P_HNKZ_H_g29rCAWuI0f0gRPy1dGfDz5KbBz1vXjYDPXYF-1RyHCC7P71MP4_waIuSqUtxD28GNBfY35y56ubpsL27w3eP17cXfO-y5lhMOUnntTOhE1wTBtPSecS5EIz2RgoVOSd9zJfquJ0p0OgTnoReNUg5M4IzvopP13kVO70sok30biodxdBHSslitjK5c6CqPf5RcccmooRUefYOvaZljfYXVUpn6mUpWRNfI51RKhmAXeXhz-cNSYldB2FUQdhWE3QRRZ_5sFrvi3Riyi34oX4OMMaKp5tUdrt0AAF9tyTljDeGfPrCQnA</recordid><startdate>20091201</startdate><enddate>20091201</enddate><creator>Homayouni, S.M.</creator><creator>Schreurs, D.M.M.-P.</creator><creator>Crupi, G.</creator><creator>Nauwelaers, B.K.J.C.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Testing</topic><topic>Dispersions</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>FETs</topic><topic>FinFET transistors</topic><topic>Frequency</topic><topic>higher order dynamics</topic><topic>Integrated circuits</topic><topic>Lookup tables</topic><topic>Mathematical analysis</topic><topic>Mathematical model</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Microwaves</topic><topic>mm-wave frequency</topic><topic>MOSFET circuits</topic><topic>MOSFETs</topic><topic>non-quasi-static</topic><topic>Nonlinear dynamical systems</topic><topic>nonlinear lookup table model</topic><topic>Nonlinearity</topic><topic>Semiconductor device modeling</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Table lookup</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Homayouni, S.M.</creatorcontrib><creatorcontrib>Schreurs, D.M.M.-P.</creatorcontrib><creatorcontrib>Crupi, G.</creatorcontrib><creatorcontrib>Nauwelaers, B.K.J.C.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Homayouni, S.M.</au><au>Schreurs, D.M.M.-P.</au><au>Crupi, G.</au><au>Nauwelaers, B.K.J.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Technology-Independent Non-Quasi-Static Table-Based Nonlinear Model Generation</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2009-12-01</date><risdate>2009</risdate><volume>57</volume><issue>12</issue><spage>2845</spage><epage>2852</epage><pages>2845-2852</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>An analytical extraction of the non-quasi-static nonlinear lookup table FET model at mm-wave frequencies is demonstrated in this study. Frequency dispersion present at mm-wave frequencies is compensated for by introduction of higher order dynamics of nonlinear constituent components. Nonlinear charge- and current-sources are used as the constituent components to represent the nonlinear device where the higher order charge- and current-sources are introduced to compensate for the non-quasi-static effects. The presented approach is validated using SOI Multi-Fin MOSFET transistors, the multiple gate MOSFET structures which have been introduced as an alternative candidate for bulk planar CMOS technology in the nanometer regime. An accurate multibias linear model is employed as the keystone for building the non-quasi-static nonlinear model. Large-signal measurements are used for model validation. Significant improvements are observed over the quasi-static nonlinear model which is demonstrated by excellent agreement between measurements and nonlinear model presented here.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2009.2033840</doi><tpages>8</tpages></addata></record> |
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| subjects | Applied sciences Buildings Circuit properties CMOS CMOS technology Constituents Current measurement Design. Technologies. Operation analysis. Testing Dispersions Electric, optical and optoelectronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology FETs FinFET transistors Frequency higher order dynamics Integrated circuits Lookup tables Mathematical analysis Mathematical model Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves mm-wave frequency MOSFET circuits MOSFETs non-quasi-static Nonlinear dynamical systems nonlinear lookup table model Nonlinearity Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Table lookup |
| title | Technology-Independent Non-Quasi-Static Table-Based Nonlinear Model Generation |
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