Transparent Electronics for See-Through AMOLED Displays
Transparent thin-film-transistors (TFTs) with a channel semiconductor based on the zinc-tin-oxide (ZTO) system are presented. Specifically, the technological and material aspects of the plasma-assisted pulsed laser deposition of these materials are discussed. The supply of additional radical oxygen...
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| Veröffentlicht in: | Journal of display technology 2009-12, Vol.5 (12), p.501-508 |
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| container_end_page | 508 |
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| container_issue | 12 |
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| container_title | Journal of display technology |
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| creator | Riedl, T. Gorrn, P. Kowalsky, W. |
| description | Transparent thin-film-transistors (TFTs) with a channel semiconductor based on the zinc-tin-oxide (ZTO) system are presented. Specifically, the technological and material aspects of the plasma-assisted pulsed laser deposition of these materials are discussed. The supply of additional radical oxygen species will be evidenced to significantly reduce defects in the material and as a consequence allows for well-behaved n-channel TFTs with mobilities higher than 10 cm 2 V -1 s -1 and a threshold voltage in the range of 0 V. In addition the devices are extremely stable versus bias/current stress, which is especially important for active matrix OLED applications. Based on a detailed understanding of the interaction of the TFT channels with oxygen a strategy for the thin-film encapsulation of the TFTs will be presented, which leaves their device characteristics unaffected. |
| doi_str_mv | 10.1109/JDT.2009.2023093 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_5331946</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5331946</ieee_id><sourcerecordid>875035409</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-842c036d01d9b605455f53a635826df5003f90b77d8ca28168ba00877a4820ac3</originalsourceid><addsrcrecordid>eNp9kD1PwzAQhi0EEqWwI7FELLCknH1xYo8VLV8q6kCQ2CzXcWiqNCl2MvTf49KKgYHl7obnTvc-hFxSGFEK8u5lko8YgAyFIUg8IgPKuYglMjz-mWmMVH6ckjPvVwAoUpEOSJY73fiNdrbpomltTefapjI-KlsXvVkb50vX9p_LaPw6n00n0aTym1pv_Tk5KXXt7cWhD8n7wzS_f4pn88fn-_EsNsh5F4uEGcC0AFrIRQo84bzkqFPkgqVFycMfpYRFlhXCaCZoKhYaQGSZTgQDbXBIbvZ3N6796q3v1Lryxta1bmzbeyUyDsiTEHhIbv8lKTAmAZMkC-j1H3TV9q4JOZSkDAXLAAMEe8i41ntnS7Vx1Vq7bbikdspVUK52ytVBeVi52q9U1tpfnGPwnqT4DcLaeOo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>912382703</pqid></control><display><type>article</type><title>Transparent Electronics for See-Through AMOLED Displays</title><source>IEEE Electronic Library (IEL)</source><creator>Riedl, T. ; Gorrn, P. ; Kowalsky, W.</creator><creatorcontrib>Riedl, T. ; Gorrn, P. ; Kowalsky, W.</creatorcontrib><description>Transparent thin-film-transistors (TFTs) with a channel semiconductor based on the zinc-tin-oxide (ZTO) system are presented. Specifically, the technological and material aspects of the plasma-assisted pulsed laser deposition of these materials are discussed. The supply of additional radical oxygen species will be evidenced to significantly reduce defects in the material and as a consequence allows for well-behaved n-channel TFTs with mobilities higher than 10 cm 2 V -1 s -1 and a threshold voltage in the range of 0 V. In addition the devices are extremely stable versus bias/current stress, which is especially important for active matrix OLED applications. Based on a detailed understanding of the interaction of the TFT channels with oxygen a strategy for the thin-film encapsulation of the TFTs will be presented, which leaves their device characteristics unaffected.</description><identifier>ISSN: 1551-319X</identifier><identifier>EISSN: 1558-9323</identifier><identifier>DOI: 10.1109/JDT.2009.2023093</identifier><identifier>CODEN: IJDTAL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Active matrix organic light emitting diodes ; Active matrix organic light-emitting diodes (OLED) ; bias stress ; Channels ; Devices ; Electronics ; Leaves ; Optical materials ; Optical pulses ; passivation ; Plasma displays ; Plasma materials processing ; Pulsed laser deposition ; Semiconductor devices ; Semiconductor lasers ; Semiconductor materials ; Semiconductors ; stability ; Stress ; Thin film transistors ; Threshold voltage ; transparent thin-film transistors (TFTs) ; zinc-tin-oxide (ZTO)</subject><ispartof>Journal of display technology, 2009-12, Vol.5 (12), p.501-508</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-842c036d01d9b605455f53a635826df5003f90b77d8ca28168ba00877a4820ac3</citedby><cites>FETCH-LOGICAL-c355t-842c036d01d9b605455f53a635826df5003f90b77d8ca28168ba00877a4820ac3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5331946$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5331946$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Riedl, T.</creatorcontrib><creatorcontrib>Gorrn, P.</creatorcontrib><creatorcontrib>Kowalsky, W.</creatorcontrib><title>Transparent Electronics for See-Through AMOLED Displays</title><title>Journal of display technology</title><addtitle>JDT</addtitle><description>Transparent thin-film-transistors (TFTs) with a channel semiconductor based on the zinc-tin-oxide (ZTO) system are presented. Specifically, the technological and material aspects of the plasma-assisted pulsed laser deposition of these materials are discussed. The supply of additional radical oxygen species will be evidenced to significantly reduce defects in the material and as a consequence allows for well-behaved n-channel TFTs with mobilities higher than 10 cm 2 V -1 s -1 and a threshold voltage in the range of 0 V. In addition the devices are extremely stable versus bias/current stress, which is especially important for active matrix OLED applications. Based on a detailed understanding of the interaction of the TFT channels with oxygen a strategy for the thin-film encapsulation of the TFTs will be presented, which leaves their device characteristics unaffected.</description><subject>Active matrix organic light emitting diodes</subject><subject>Active matrix organic light-emitting diodes (OLED)</subject><subject>bias stress</subject><subject>Channels</subject><subject>Devices</subject><subject>Electronics</subject><subject>Leaves</subject><subject>Optical materials</subject><subject>Optical pulses</subject><subject>passivation</subject><subject>Plasma displays</subject><subject>Plasma materials processing</subject><subject>Pulsed laser deposition</subject><subject>Semiconductor devices</subject><subject>Semiconductor lasers</subject><subject>Semiconductor materials</subject><subject>Semiconductors</subject><subject>stability</subject><subject>Stress</subject><subject>Thin film transistors</subject><subject>Threshold voltage</subject><subject>transparent thin-film transistors (TFTs)</subject><subject>zinc-tin-oxide (ZTO)</subject><issn>1551-319X</issn><issn>1558-9323</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kD1PwzAQhi0EEqWwI7FELLCknH1xYo8VLV8q6kCQ2CzXcWiqNCl2MvTf49KKgYHl7obnTvc-hFxSGFEK8u5lko8YgAyFIUg8IgPKuYglMjz-mWmMVH6ckjPvVwAoUpEOSJY73fiNdrbpomltTefapjI-KlsXvVkb50vX9p_LaPw6n00n0aTym1pv_Tk5KXXt7cWhD8n7wzS_f4pn88fn-_EsNsh5F4uEGcC0AFrIRQo84bzkqFPkgqVFycMfpYRFlhXCaCZoKhYaQGSZTgQDbXBIbvZ3N6796q3v1Lryxta1bmzbeyUyDsiTEHhIbv8lKTAmAZMkC-j1H3TV9q4JOZSkDAXLAAMEe8i41ntnS7Vx1Vq7bbikdspVUK52ytVBeVi52q9U1tpfnGPwnqT4DcLaeOo</recordid><startdate>20091201</startdate><enddate>20091201</enddate><creator>Riedl, T.</creator><creator>Gorrn, P.</creator><creator>Kowalsky, W.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20091201</creationdate><title>Transparent Electronics for See-Through AMOLED Displays</title><author>Riedl, T. ; Gorrn, P. ; Kowalsky, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-842c036d01d9b605455f53a635826df5003f90b77d8ca28168ba00877a4820ac3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Active matrix organic light emitting diodes</topic><topic>Active matrix organic light-emitting diodes (OLED)</topic><topic>bias stress</topic><topic>Channels</topic><topic>Devices</topic><topic>Electronics</topic><topic>Leaves</topic><topic>Optical materials</topic><topic>Optical pulses</topic><topic>passivation</topic><topic>Plasma displays</topic><topic>Plasma materials processing</topic><topic>Pulsed laser deposition</topic><topic>Semiconductor devices</topic><topic>Semiconductor lasers</topic><topic>Semiconductor materials</topic><topic>Semiconductors</topic><topic>stability</topic><topic>Stress</topic><topic>Thin film transistors</topic><topic>Threshold voltage</topic><topic>transparent thin-film transistors (TFTs)</topic><topic>zinc-tin-oxide (ZTO)</topic><toplevel>online_resources</toplevel><creatorcontrib>Riedl, T.</creatorcontrib><creatorcontrib>Gorrn, P.</creatorcontrib><creatorcontrib>Kowalsky, W.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>Journal of display technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Riedl, T.</au><au>Gorrn, P.</au><au>Kowalsky, W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transparent Electronics for See-Through AMOLED Displays</atitle><jtitle>Journal of display technology</jtitle><stitle>JDT</stitle><date>2009-12-01</date><risdate>2009</risdate><volume>5</volume><issue>12</issue><spage>501</spage><epage>508</epage><pages>501-508</pages><issn>1551-319X</issn><eissn>1558-9323</eissn><coden>IJDTAL</coden><abstract>Transparent thin-film-transistors (TFTs) with a channel semiconductor based on the zinc-tin-oxide (ZTO) system are presented. Specifically, the technological and material aspects of the plasma-assisted pulsed laser deposition of these materials are discussed. The supply of additional radical oxygen species will be evidenced to significantly reduce defects in the material and as a consequence allows for well-behaved n-channel TFTs with mobilities higher than 10 cm 2 V -1 s -1 and a threshold voltage in the range of 0 V. In addition the devices are extremely stable versus bias/current stress, which is especially important for active matrix OLED applications. Based on a detailed understanding of the interaction of the TFT channels with oxygen a strategy for the thin-film encapsulation of the TFTs will be presented, which leaves their device characteristics unaffected.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JDT.2009.2023093</doi><tpages>8</tpages></addata></record> |
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| ispartof | Journal of display technology, 2009-12, Vol.5 (12), p.501-508 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Active matrix organic light emitting diodes Active matrix organic light-emitting diodes (OLED) bias stress Channels Devices Electronics Leaves Optical materials Optical pulses passivation Plasma displays Plasma materials processing Pulsed laser deposition Semiconductor devices Semiconductor lasers Semiconductor materials Semiconductors stability Stress Thin film transistors Threshold voltage transparent thin-film transistors (TFTs) zinc-tin-oxide (ZTO) |
| title | Transparent Electronics for See-Through AMOLED Displays |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T06%3A09%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Transparent%20Electronics%20for%20See-Through%20AMOLED%20Displays&rft.jtitle=Journal%20of%20display%20technology&rft.au=Riedl,%20T.&rft.date=2009-12-01&rft.volume=5&rft.issue=12&rft.spage=501&rft.epage=508&rft.pages=501-508&rft.issn=1551-319X&rft.eissn=1558-9323&rft.coden=IJDTAL&rft_id=info:doi/10.1109/JDT.2009.2023093&rft_dat=%3Cproquest_RIE%3E875035409%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=912382703&rft_id=info:pmid/&rft_ieee_id=5331946&rfr_iscdi=true |