Terahertz detection in a multi-gate high electron mobility transistor

We observe the THz response of a multi-gate high electron mobility transistor detector structure. These devices are fabricated from single heterostructure GaAs/AlGaAs material and feature three gates: a `source gate' adjacent to source terminal, a `drain gate' adjacent to drain terminal, a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Dyer, G.C., Aizin, G.R., Shaner, E.A., Wanke, M.C., Reno, J.L., Mikalopas, J., Crossno, J.D., Allen, S.J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aperture antennas Broadband antennas Dipole antennas HEMTs MODFETs Optical transmitters Power generation Receiving antennas Resonance Transmitting antennas
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!