A novel device structure using a shared-subcollector, cascoded inverse-mode SiGe HBT for enhanced radiation tolerance

We present a novel device structure using an inverse-mode, cascoded (IMC) SiGe HBT for improved tolerance of heavy ion irradiation. The cascoded SiGe device consists of a forward-mode, common-emitter SiGe HBT cascoded with a common-base inverse-mode SiGe HBT, with the subcollector region of the two...

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Bibliographische Detailangaben

Hauptverfasser:	Thrivikraman, T.K., Appaswamy, A., Phillips, S.D., Sutton, A.K., Wilcox, E.P., Cressler, J.D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bipolar transistor circuits Circuits Current measurement Degradation Gain Germanium silicon alloys Heterojunction bipolar transistors Radiation effects Semiconductor devices SiGe BiCMOS integrated circuits Silicon germanium Single event upset Space technology
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