A novel device structure using a shared-subcollector, cascoded inverse-mode SiGe HBT for enhanced radiation tolerance
We present a novel device structure using an inverse-mode, cascoded (IMC) SiGe HBT for improved tolerance of heavy ion irradiation. The cascoded SiGe device consists of a forward-mode, common-emitter SiGe HBT cascoded with a common-base inverse-mode SiGe HBT, with the subcollector region of the two...
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| creator | Thrivikraman, T.K. Appaswamy, A. Phillips, S.D. Sutton, A.K. Wilcox, E.P. Cressler, J.D. |
| description | We present a novel device structure using an inverse-mode, cascoded (IMC) SiGe HBT for improved tolerance of heavy ion irradiation. The cascoded SiGe device consists of a forward-mode, common-emitter SiGe HBT cascoded with a common-base inverse-mode SiGe HBT, with the subcollector region of the two devices shared. The device was fabricated in both first and third-generation, commercially-available SiGe HBT technologies. The third-generation IMC device was measured to have over 20 dB of current gain and over 30 dB of power gain at 10 GHz. In addition, the measured total dose radiation response and simulated current transients are presented. These results demonstrate the potential use of these devices in high-speed circuits intended for operation in space or other extreme environments. |
| doi_str_mv | 10.1109/BIPOL.2009.5314139 |
| format | Conference Proceeding |
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The cascoded SiGe device consists of a forward-mode, common-emitter SiGe HBT cascoded with a common-base inverse-mode SiGe HBT, with the subcollector region of the two devices shared. The device was fabricated in both first and third-generation, commercially-available SiGe HBT technologies. The third-generation IMC device was measured to have over 20 dB of current gain and over 30 dB of power gain at 10 GHz. In addition, the measured total dose radiation response and simulated current transients are presented. 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The cascoded SiGe device consists of a forward-mode, common-emitter SiGe HBT cascoded with a common-base inverse-mode SiGe HBT, with the subcollector region of the two devices shared. The device was fabricated in both first and third-generation, commercially-available SiGe HBT technologies. The third-generation IMC device was measured to have over 20 dB of current gain and over 30 dB of power gain at 10 GHz. In addition, the measured total dose radiation response and simulated current transients are presented. These results demonstrate the potential use of these devices in high-speed circuits intended for operation in space or other extreme environments.</description><subject>Bipolar transistor circuits</subject><subject>Circuits</subject><subject>Current measurement</subject><subject>Degradation</subject><subject>Gain</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>Radiation effects</subject><subject>Semiconductor devices</subject><subject>SiGe BiCMOS integrated circuits</subject><subject>Silicon germanium</subject><subject>Single event upset</subject><subject>Space technology</subject><issn>1088-9299</issn><issn>2378-590X</issn><isbn>9781424448944</isbn><isbn>1424448948</isbn><isbn>1424448964</isbn><isbn>9781424448968</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1UNtqAjEUTG9Qtf5A-5IPaGxu6-Y8qlgVBAu10DfJJmdryrpbkl2hf19L7dMwF4ZhCLkXfCQEh6fp6mWzHknOYZQpoYWCC9IXWmqtDYz1JelJlRuWAX-_IkPIzb-n9TXpCW4MAwlwS_opfXIuucxNj3QTWjdHrKjHY3BIUxs713YRaZdC_UEtTXsb0bPUFa6pKnRtEx-ps8k1Hj0N9RFjQnY4MfoaFkiX0y0tm0ix3tvanSLR-mDb0NS0bSqMv-IduSltlXB4xgF5e55vZ0u23ixWs8maBZFnLRuPjQJTcCMwKzPtVGE4gMpP08Ea1NZ7I7zjIitzqwqlPXAhEdA7VRot1YA8_PUGRNx9xXCw8Xt3vk_9AHAaYM4</recordid><startdate>200910</startdate><enddate>200910</enddate><creator>Thrivikraman, T.K.</creator><creator>Appaswamy, A.</creator><creator>Phillips, S.D.</creator><creator>Sutton, A.K.</creator><creator>Wilcox, E.P.</creator><creator>Cressler, J.D.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200910</creationdate><title>A novel device structure using a shared-subcollector, cascoded inverse-mode SiGe HBT for enhanced radiation tolerance</title><author>Thrivikraman, T.K. ; Appaswamy, A. ; Phillips, S.D. ; Sutton, A.K. ; Wilcox, E.P. ; Cressler, J.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-668398b081e5f54c3b8099370279a8e4add81dc015f7a3b34d9012e9edc3f8423</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Bipolar transistor circuits</topic><topic>Circuits</topic><topic>Current measurement</topic><topic>Degradation</topic><topic>Gain</topic><topic>Germanium silicon alloys</topic><topic>Heterojunction bipolar transistors</topic><topic>Radiation effects</topic><topic>Semiconductor devices</topic><topic>SiGe BiCMOS integrated circuits</topic><topic>Silicon germanium</topic><topic>Single event upset</topic><topic>Space technology</topic><toplevel>online_resources</toplevel><creatorcontrib>Thrivikraman, T.K.</creatorcontrib><creatorcontrib>Appaswamy, A.</creatorcontrib><creatorcontrib>Phillips, S.D.</creatorcontrib><creatorcontrib>Sutton, A.K.</creatorcontrib><creatorcontrib>Wilcox, E.P.</creatorcontrib><creatorcontrib>Cressler, J.D.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Thrivikraman, T.K.</au><au>Appaswamy, A.</au><au>Phillips, S.D.</au><au>Sutton, A.K.</au><au>Wilcox, E.P.</au><au>Cressler, J.D.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A novel device structure using a shared-subcollector, cascoded inverse-mode SiGe HBT for enhanced radiation tolerance</atitle><btitle>2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting</btitle><stitle>BIPOL</stitle><date>2009-10</date><risdate>2009</risdate><spage>79</spage><epage>82</epage><pages>79-82</pages><issn>1088-9299</issn><eissn>2378-590X</eissn><isbn>9781424448944</isbn><isbn>1424448948</isbn><eisbn>1424448964</eisbn><eisbn>9781424448968</eisbn><abstract>We present a novel device structure using an inverse-mode, cascoded (IMC) SiGe HBT for improved tolerance of heavy ion irradiation. The cascoded SiGe device consists of a forward-mode, common-emitter SiGe HBT cascoded with a common-base inverse-mode SiGe HBT, with the subcollector region of the two devices shared. The device was fabricated in both first and third-generation, commercially-available SiGe HBT technologies. The third-generation IMC device was measured to have over 20 dB of current gain and over 30 dB of power gain at 10 GHz. In addition, the measured total dose radiation response and simulated current transients are presented. These results demonstrate the potential use of these devices in high-speed circuits intended for operation in space or other extreme environments.</abstract><pub>IEEE</pub><doi>10.1109/BIPOL.2009.5314139</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 1088-9299 |
| ispartof | 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009, p.79-82 |
| issn | 1088-9299 2378-590X |
| language | eng |
| recordid | cdi_ieee_primary_5314139 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Bipolar transistor circuits Circuits Current measurement Degradation Gain Germanium silicon alloys Heterojunction bipolar transistors Radiation effects Semiconductor devices SiGe BiCMOS integrated circuits Silicon germanium Single event upset Space technology |
| title | A novel device structure using a shared-subcollector, cascoded inverse-mode SiGe HBT for enhanced radiation tolerance |
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