Reliability of AlGaN/GaN HEMT: Impact of acceleration condition on dominant degradation mechanism

Reliability issue for AlGaN/GaN HEMT is in focus of today's research, especially for high voltage operation. RF overload tests at various channel temperatures and drain bias were performed using on-probes reliability testing allowing quick feedback to technology. Two degradation mechanisms: inv...

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Bibliographische Detailangaben

Hauptverfasser:	Rozman, D., Knafo, Y., Baksht, T., Aktushev, O., Kolatker, G., Moskovitch, S., Bunin, G.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Acceleration Aluminum gallium nitride Degradation Electron traps Gallium nitride HEMTs Piezoelectric effect Temperature dependence Testing Voltage
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