RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements

The reliability of GaN HEMTs under RF stress has been evaluated and correlated with DC stress and current DLTS measurements techniques. During RF operation a degradation of output power, PAE and an increase in reverse gate current has been observed. A similar degradation has been observed by applyin...

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Bibliographische Detailangaben

Hauptverfasser:	Chini, A., Di Lecce, V., Esposto, M., Meneghesso, G., Zanoni, E.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Gallium nitride HEMTs MODFETs Power generation Pulse measurements Radio frequency Reliability engineering Stress measurement Testing Thermal degradation
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