A control oriented modeling methodology for plasma enhanced chemical vapor deposition processes
This paper reports on work in progress towards developing a control oriented modeling methodology for plasma enhanced chemical vapor deposition (PECVD) processes with an emphasis on spatial deposition rate uniformity. The authors' strategy contains three components: (1) a detailed computational...
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| creator | Hamby, E.S. Demos, A.T. Kabamba, S. Khargonekar, P.P. |
| description | This paper reports on work in progress towards developing a control oriented modeling methodology for plasma enhanced chemical vapor deposition (PECVD) processes with an emphasis on spatial deposition rate uniformity. The authors' strategy contains three components: (1) a detailed computational model, (2) a control oriented reduced order model with an associated uncertainty model, and (3) experiments. The authors' computational model is based on the software package FLUENT, and as a preliminary result the authors distinguish two types of deposition rate nonuniformities. The reduced order model is derived using a Galerkin method and an associated uncertainty model is derived using a maximum principle. |
| doi_str_mv | 10.1109/ACC.1995.529241 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_529241</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>529241</ieee_id><sourcerecordid>529241</sourcerecordid><originalsourceid>FETCH-ieee_primary_5292413</originalsourceid><addsrcrecordid>eNp9jr0KwjAURgMi-DsLTvcFrEnboBmlKD6Aewnp1UaS3JAUwbe3oLNn-YbzDYexjeCFEFztT01TCKVkIUtV1mLCFvxw5FVZ11LO2DrnJx-R8qDqas7aExgKQyIHlCyGATvw1KGz4QEeh546cvR4w50SRKez14Ch18GMR9Ojt0Y7eOk46g4jZTtYChATGcwZ84pN79plXP92ybaX86257iwitjFZr9O7_aZWf-UHgQBEUQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A control oriented modeling methodology for plasma enhanced chemical vapor deposition processes</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Hamby, E.S. ; Demos, A.T. ; Kabamba, S. ; Khargonekar, P.P.</creator><creatorcontrib>Hamby, E.S. ; Demos, A.T. ; Kabamba, S. ; Khargonekar, P.P.</creatorcontrib><description>This paper reports on work in progress towards developing a control oriented modeling methodology for plasma enhanced chemical vapor deposition (PECVD) processes with an emphasis on spatial deposition rate uniformity. The authors' strategy contains three components: (1) a detailed computational model, (2) a control oriented reduced order model with an associated uncertainty model, and (3) experiments. The authors' computational model is based on the software package FLUENT, and as a preliminary result the authors distinguish two types of deposition rate nonuniformities. The reduced order model is derived using a Galerkin method and an associated uncertainty model is derived using a maximum principle.</description><identifier>ISBN: 0780324455</identifier><identifier>ISBN: 9780780324459</identifier><identifier>DOI: 10.1109/ACC.1995.529241</identifier><language>eng</language><publisher>IEEE</publisher><subject>Chemical vapor deposition ; Computational modeling ; Computer aided manufacturing ; Computer displays ; Inductors ; Plasma applications ; Plasma chemistry ; Plasma displays ; Plasma materials processing ; Uncertainty</subject><ispartof>Proceedings of 1995 American Control Conference - ACC'95, 1995, Vol.1, p.220-224 vol.1</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/529241$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/529241$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hamby, E.S.</creatorcontrib><creatorcontrib>Demos, A.T.</creatorcontrib><creatorcontrib>Kabamba, S.</creatorcontrib><creatorcontrib>Khargonekar, P.P.</creatorcontrib><title>A control oriented modeling methodology for plasma enhanced chemical vapor deposition processes</title><title>Proceedings of 1995 American Control Conference - ACC'95</title><addtitle>ACC</addtitle><description>This paper reports on work in progress towards developing a control oriented modeling methodology for plasma enhanced chemical vapor deposition (PECVD) processes with an emphasis on spatial deposition rate uniformity. The authors' strategy contains three components: (1) a detailed computational model, (2) a control oriented reduced order model with an associated uncertainty model, and (3) experiments. The authors' computational model is based on the software package FLUENT, and as a preliminary result the authors distinguish two types of deposition rate nonuniformities. The reduced order model is derived using a Galerkin method and an associated uncertainty model is derived using a maximum principle.</description><subject>Chemical vapor deposition</subject><subject>Computational modeling</subject><subject>Computer aided manufacturing</subject><subject>Computer displays</subject><subject>Inductors</subject><subject>Plasma applications</subject><subject>Plasma chemistry</subject><subject>Plasma displays</subject><subject>Plasma materials processing</subject><subject>Uncertainty</subject><isbn>0780324455</isbn><isbn>9780780324459</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1995</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jr0KwjAURgMi-DsLTvcFrEnboBmlKD6Aewnp1UaS3JAUwbe3oLNn-YbzDYexjeCFEFztT01TCKVkIUtV1mLCFvxw5FVZ11LO2DrnJx-R8qDqas7aExgKQyIHlCyGATvw1KGz4QEeh546cvR4w50SRKez14Ch18GMR9Ojt0Y7eOk46g4jZTtYChATGcwZ84pN79plXP92ybaX86257iwitjFZr9O7_aZWf-UHgQBEUQ</recordid><startdate>1995</startdate><enddate>1995</enddate><creator>Hamby, E.S.</creator><creator>Demos, A.T.</creator><creator>Kabamba, S.</creator><creator>Khargonekar, P.P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1995</creationdate><title>A control oriented modeling methodology for plasma enhanced chemical vapor deposition processes</title><author>Hamby, E.S. ; Demos, A.T. ; Kabamba, S. ; Khargonekar, P.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_5292413</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Chemical vapor deposition</topic><topic>Computational modeling</topic><topic>Computer aided manufacturing</topic><topic>Computer displays</topic><topic>Inductors</topic><topic>Plasma applications</topic><topic>Plasma chemistry</topic><topic>Plasma displays</topic><topic>Plasma materials processing</topic><topic>Uncertainty</topic><toplevel>online_resources</toplevel><creatorcontrib>Hamby, E.S.</creatorcontrib><creatorcontrib>Demos, A.T.</creatorcontrib><creatorcontrib>Kabamba, S.</creatorcontrib><creatorcontrib>Khargonekar, P.P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hamby, E.S.</au><au>Demos, A.T.</au><au>Kabamba, S.</au><au>Khargonekar, P.P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A control oriented modeling methodology for plasma enhanced chemical vapor deposition processes</atitle><btitle>Proceedings of 1995 American Control Conference - ACC'95</btitle><stitle>ACC</stitle><date>1995</date><risdate>1995</risdate><volume>1</volume><spage>220</spage><epage>224 vol.1</epage><pages>220-224 vol.1</pages><isbn>0780324455</isbn><isbn>9780780324459</isbn><abstract>This paper reports on work in progress towards developing a control oriented modeling methodology for plasma enhanced chemical vapor deposition (PECVD) processes with an emphasis on spatial deposition rate uniformity. The authors' strategy contains three components: (1) a detailed computational model, (2) a control oriented reduced order model with an associated uncertainty model, and (3) experiments. The authors' computational model is based on the software package FLUENT, and as a preliminary result the authors distinguish two types of deposition rate nonuniformities. The reduced order model is derived using a Galerkin method and an associated uncertainty model is derived using a maximum principle.</abstract><pub>IEEE</pub><doi>10.1109/ACC.1995.529241</doi></addata></record> |
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| ispartof | Proceedings of 1995 American Control Conference - ACC'95, 1995, Vol.1, p.220-224 vol.1 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Chemical vapor deposition Computational modeling Computer aided manufacturing Computer displays Inductors Plasma applications Plasma chemistry Plasma displays Plasma materials processing Uncertainty |
| title | A control oriented modeling methodology for plasma enhanced chemical vapor deposition processes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T04%3A01%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20control%20oriented%20modeling%20methodology%20for%20plasma%20enhanced%20chemical%20vapor%20deposition%20processes&rft.btitle=Proceedings%20of%201995%20American%20Control%20Conference%20-%20ACC'95&rft.au=Hamby,%20E.S.&rft.date=1995&rft.volume=1&rft.spage=220&rft.epage=224%20vol.1&rft.pages=220-224%20vol.1&rft.isbn=0780324455&rft.isbn_list=9780780324459&rft_id=info:doi/10.1109/ACC.1995.529241&rft_dat=%3Cieee_6IE%3E529241%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=529241&rfr_iscdi=true |