Analytical approach of saturation voltage instability in high-speed IGBT

A High speed IGBT utilizing an Electron Beam (EB) irradiation and a post annealing process for a carrier lifetime control for a thick n-drift layer has been developed for industry applications, and home appliance especially in the very small chip size to achieve a low cost and a minimizing a size re...

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Bibliographische Detailangaben

Hauptverfasser:	Kaneda, M., Tadokoro, C., Kiyoi, A., Kusunoki, S., Kurokawa, H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Charge carrier lifetime Current density Device characterization Electric variables Electron beams IGBT Industry applications Insulated gate bipolar transistors Reliability Size control Thickness control Voltage
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