Formation of GaAs-Ge heterointerface in the presence of oxide
Results of X-ray photoelectron spectroscopy and reflection high-energy electron diffraction of process of GaAs-Ge heterointerface formation under condition of incomplete removal of inherent oxide from GaAs substrate are presented. It was shown that deposition of Ge at the stage of lacunas formation...
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| creator | Rudin, S.A. Suprun, S.P. |
| description | Results of X-ray photoelectron spectroscopy and reflection high-energy electron diffraction of process of GaAs-Ge heterointerface formation under condition of incomplete removal of inherent oxide from GaAs substrate are presented. It was shown that deposition of Ge at the stage of lacunas formation prevents stoichiometric As evaporation from the substrate surface and Ga enrichment. Results of Hall measurements at layerwise etching of epilayers indicate an absence of autodoping effect. |
| doi_str_mv | 10.1109/EDM.2009.5173927 |
| format | Conference Proceeding |
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It was shown that deposition of Ge at the stage of lacunas formation prevents stoichiometric As evaporation from the substrate surface and Ga enrichment. Results of Hall measurements at layerwise etching of epilayers indicate an absence of autodoping effect.</description><identifier>ISSN: 1815-3712</identifier><identifier>ISBN: 9781424445714</identifier><identifier>ISBN: 142444571X</identifier><identifier>DOI: 10.1109/EDM.2009.5173927</identifier><identifier>LCCN: 2009903976</identifier><language>eng</language><publisher>IEEE</publisher><subject>diffraction ; Gallium arsenide ; heterojunction ; Heterojunctions ; Impurities ; oxide ; Production ; Reflection ; Seminars ; Spectroscopy ; Substrates ; Surface treatment ; Technology ; X-ray diffraction</subject><ispartof>2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, 2009, p.51-55</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5173927$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,781,785,790,791,2059,27926,54921</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5173927$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Rudin, S.A.</creatorcontrib><creatorcontrib>Suprun, S.P.</creatorcontrib><title>Formation of GaAs-Ge heterointerface in the presence of oxide</title><title>2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices</title><addtitle>EDM</addtitle><description>Results of X-ray photoelectron spectroscopy and reflection high-energy electron diffraction of process of GaAs-Ge heterointerface formation under condition of incomplete removal of inherent oxide from GaAs substrate are presented. It was shown that deposition of Ge at the stage of lacunas formation prevents stoichiometric As evaporation from the substrate surface and Ga enrichment. Results of Hall measurements at layerwise etching of epilayers indicate an absence of autodoping effect.</description><subject>diffraction</subject><subject>Gallium arsenide</subject><subject>heterojunction</subject><subject>Heterojunctions</subject><subject>Impurities</subject><subject>oxide</subject><subject>Production</subject><subject>Reflection</subject><subject>Seminars</subject><subject>Spectroscopy</subject><subject>Substrates</subject><subject>Surface treatment</subject><subject>Technology</subject><subject>X-ray diffraction</subject><issn>1815-3712</issn><isbn>9781424445714</isbn><isbn>142444571X</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotT01Lw0AUXNCCteYueNk_kLhv9-3XwUOpbRRaetFz2SRv6YpNSpKD_ntT7BzmA4aBYewRRAEg_PP6dVdIIXyhwSov7Q3LvHWAEhG1Bbxlc3Cgc2VBztj9peqF8tbcsWwYvsQE1Eo6mLOXTdefwpi6lneRl2E55CXxI43Ud6mdOIaaeGr5eCR-7mmgdspTtftJDT2wWQzfA2VXXbDPzfpj9ZZv9-X7arnNE1g95l4F8jpWTklyoaLaWNnIiGQoQFV5Hy8mYmOcwahQR4sIKspa1mYitWBP_7uJiA7nPp1C_3u4vld_PS1KwA</recordid><startdate>200907</startdate><enddate>200907</enddate><creator>Rudin, S.A.</creator><creator>Suprun, S.P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200907</creationdate><title>Formation of GaAs-Ge heterointerface in the presence of oxide</title><author>Rudin, S.A. ; Suprun, S.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-93ae95fb832e8abec672d2f4e6ea1bb99f6ea1f4d6864f345f74413f2c2c62c23</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>diffraction</topic><topic>Gallium arsenide</topic><topic>heterojunction</topic><topic>Heterojunctions</topic><topic>Impurities</topic><topic>oxide</topic><topic>Production</topic><topic>Reflection</topic><topic>Seminars</topic><topic>Spectroscopy</topic><topic>Substrates</topic><topic>Surface treatment</topic><topic>Technology</topic><topic>X-ray diffraction</topic><toplevel>online_resources</toplevel><creatorcontrib>Rudin, S.A.</creatorcontrib><creatorcontrib>Suprun, S.P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rudin, S.A.</au><au>Suprun, S.P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Formation of GaAs-Ge heterointerface in the presence of oxide</atitle><btitle>2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices</btitle><stitle>EDM</stitle><date>2009-07</date><risdate>2009</risdate><spage>51</spage><epage>55</epage><pages>51-55</pages><issn>1815-3712</issn><isbn>9781424445714</isbn><isbn>142444571X</isbn><abstract>Results of X-ray photoelectron spectroscopy and reflection high-energy electron diffraction of process of GaAs-Ge heterointerface formation under condition of incomplete removal of inherent oxide from GaAs substrate are presented. It was shown that deposition of Ge at the stage of lacunas formation prevents stoichiometric As evaporation from the substrate surface and Ga enrichment. Results of Hall measurements at layerwise etching of epilayers indicate an absence of autodoping effect.</abstract><pub>IEEE</pub><doi>10.1109/EDM.2009.5173927</doi><tpages>5</tpages></addata></record> |
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| issn | 1815-3712 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | diffraction Gallium arsenide heterojunction Heterojunctions Impurities oxide Production Reflection Seminars Spectroscopy Substrates Surface treatment Technology X-ray diffraction |
| title | Formation of GaAs-Ge heterointerface in the presence of oxide |
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