Kinetics of indium arsenide quantum dots formation on gallium arsenide (001) substrate
Kinetics of quantum dots (QDs) formation in droplet epitaxy is investigated. Optimal growth parameter values are specified for deposited indium amount and growth interruption. It is shown that droplet epitaxy allows to decrease QDs density by an order of magnitude and get spectrum red-shift in compa...
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| creator | Lyamkina, A.A. Dmitriev, D.V. Moshchenko, S.P. Toropov, A.I. |
| description | Kinetics of quantum dots (QDs) formation in droplet epitaxy is investigated. Optimal growth parameter values are specified for deposited indium amount and growth interruption. It is shown that droplet epitaxy allows to decrease QDs density by an order of magnitude and get spectrum red-shift in comparison with Stranski-Krastanov method. As it follows from spectra analysis, growth interruption increase results in the increase of a ratio large QDs peaks area/small QDs peaks area which indicates that there are transient processes with material redistribution. |
| doi_str_mv | 10.1109/EDM.2009.5173921 |
| format | Conference Proceeding |
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Optimal growth parameter values are specified for deposited indium amount and growth interruption. It is shown that droplet epitaxy allows to decrease QDs density by an order of magnitude and get spectrum red-shift in comparison with Stranski-Krastanov method. 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Optimal growth parameter values are specified for deposited indium amount and growth interruption. It is shown that droplet epitaxy allows to decrease QDs density by an order of magnitude and get spectrum red-shift in comparison with Stranski-Krastanov method. As it follows from spectra analysis, growth interruption increase results in the increase of a ratio large QDs peaks area/small QDs peaks area which indicates that there are transient processes with material redistribution.</description><subject>Atomic layer deposition</subject><subject>droplet epitaxy</subject><subject>Epitaxial growth</subject><subject>Gallium arsenide</subject><subject>growth interruption</subject><subject>Indium</subject><subject>kinetic curve</subject><subject>Kinetic theory</subject><subject>Nanostructures</subject><subject>Quantum computing</subject><subject>Quantum dot</subject><subject>Quantum dots</subject><subject>Substrates</subject><subject>Surface morphology</subject><issn>1815-3712</issn><isbn>9781424445714</isbn><isbn>142444571X</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVUE1LxDAUDOiC69q74CVHPbTmvSRNc5R1_cAVL-p1eW0Tiey22qQH_71d3IvDwMAwDMMwdg6iABD2enX7XKAQttBgpEU4Ypk1FShUSmkD6pjNoQKdSwM4Y6f7qBXSmvKEZTF-iglKS6xgzt6fQudSaCLvPQ9dG8YdpyG6LrSOf4_Upclo-xS574cdpdB3fOIHbbf_opdCwBWPYx3TQMmdsZmnbXTZQRfs7W71unzI1y_3j8ubdR7A6JQDoNFek0VlbC1a0zqq9mOdKWuB0peShKCqQdJoEIAqbL1tSl82tkSSC3bx1xucc5uvIexo-NkcbpG_E9ZS8A</recordid><startdate>200907</startdate><enddate>200907</enddate><creator>Lyamkina, A.A.</creator><creator>Dmitriev, D.V.</creator><creator>Moshchenko, S.P.</creator><creator>Toropov, A.I.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200907</creationdate><title>Kinetics of indium arsenide quantum dots formation on gallium arsenide (001) substrate</title><author>Lyamkina, A.A. ; Dmitriev, D.V. ; Moshchenko, S.P. ; Toropov, A.I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-11275f5a92479b0d7dea80990e76b023f63a00a8c2a527211a82df9c6f6c962a3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Atomic layer deposition</topic><topic>droplet epitaxy</topic><topic>Epitaxial growth</topic><topic>Gallium arsenide</topic><topic>growth interruption</topic><topic>Indium</topic><topic>kinetic curve</topic><topic>Kinetic theory</topic><topic>Nanostructures</topic><topic>Quantum computing</topic><topic>Quantum dot</topic><topic>Quantum dots</topic><topic>Substrates</topic><topic>Surface morphology</topic><toplevel>online_resources</toplevel><creatorcontrib>Lyamkina, A.A.</creatorcontrib><creatorcontrib>Dmitriev, D.V.</creatorcontrib><creatorcontrib>Moshchenko, S.P.</creatorcontrib><creatorcontrib>Toropov, A.I.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEL</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lyamkina, A.A.</au><au>Dmitriev, D.V.</au><au>Moshchenko, S.P.</au><au>Toropov, A.I.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Kinetics of indium arsenide quantum dots formation on gallium arsenide (001) substrate</atitle><btitle>2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices</btitle><stitle>EDM</stitle><date>2009-07</date><risdate>2009</risdate><spage>37</spage><epage>39</epage><pages>37-39</pages><issn>1815-3712</issn><isbn>9781424445714</isbn><isbn>142444571X</isbn><abstract>Kinetics of quantum dots (QDs) formation in droplet epitaxy is investigated. Optimal growth parameter values are specified for deposited indium amount and growth interruption. It is shown that droplet epitaxy allows to decrease QDs density by an order of magnitude and get spectrum red-shift in comparison with Stranski-Krastanov method. As it follows from spectra analysis, growth interruption increase results in the increase of a ratio large QDs peaks area/small QDs peaks area which indicates that there are transient processes with material redistribution.</abstract><pub>IEEE</pub><doi>10.1109/EDM.2009.5173921</doi><tpages>3</tpages></addata></record> |
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| issn | 1815-3712 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Atomic layer deposition droplet epitaxy Epitaxial growth Gallium arsenide growth interruption Indium kinetic curve Kinetic theory Nanostructures Quantum computing Quantum dot Quantum dots Substrates Surface morphology |
| title | Kinetics of indium arsenide quantum dots formation on gallium arsenide (001) substrate |
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