Kinetics of indium arsenide quantum dots formation on gallium arsenide (001) substrate

Kinetics of indium arsenide quantum dots formation on gallium arsenide (001) substrate

Kinetics of quantum dots (QDs) formation in droplet epitaxy is investigated. Optimal growth parameter values are specified for deposited indium amount and growth interruption. It is shown that droplet epitaxy allows to decrease QDs density by an order of magnitude and get spectrum red-shift in compa...

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Hauptverfasser: Lyamkina, A.A., Dmitriev, D.V., Moshchenko, S.P., Toropov, A.I.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Atomic layer deposition
droplet epitaxy
Epitaxial growth
Gallium arsenide
growth interruption
Indium
kinetic curve
Kinetic theory
Nanostructures
Quantum computing
Quantum dot
Quantum dots
Substrates
Surface morphology
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Zusammenfassung:Kinetics of quantum dots (QDs) formation in droplet epitaxy is investigated. Optimal growth parameter values are specified for deposited indium amount and growth interruption. It is shown that droplet epitaxy allows to decrease QDs density by an order of magnitude and get spectrum red-shift in comparison with Stranski-Krastanov method. As it follows from spectra analysis, growth interruption increase results in the increase of a ratio large QDs peaks area/small QDs peaks area which indicates that there are transient processes with material redistribution.
ISSN:1815-3712
DOI:10.1109/EDM.2009.5173921