The electrical properties of MOS-structures with silicon nanoballs incrusted in SiO2 layer
Series of nanopowder were manufactured, for which peak was observed in Raman's spectrum. That peak corresponds to Raman scattering on monocrystalline silicon. In photoluminescence spectra broad peaks were observed. That peaks covers range from red to blue. MOS-structures with nanoballs incruste...
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| creator | Voshchenkov, A.A. Efremov, M.D. Antonenko, A.H. Kamayev, G.H. Volodin, V.A. Arzhannikova, S.A. Vishnyakov, A.V. Marin, D.V. Gismatulin, A.A. |
| description | Series of nanopowder were manufactured, for which peak was observed in Raman's spectrum. That peak corresponds to Raman scattering on monocrystalline silicon. In photoluminescence spectra broad peaks were observed. That peaks covers range from red to blue. MOS-structures with nanoballs incrusted in SiO 2 were manufactured. For those structures, differential Voltage-Capacity (C-V) and Conductivity characteristics with frequency and structure variety were obtained. Significant increase of differential capacity in an accumulation region was observed. Frequency dependence is obvious. Also Static volt-ampere characteristic was obtained with dependence of Temperature and lighting of a sample. Characteristics have diode type. Photo effect observed at room temperature. |
| doi_str_mv | 10.1109/EDM.2009.5173913 |
| format | Conference Proceeding |
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That peak corresponds to Raman scattering on monocrystalline silicon. In photoluminescence spectra broad peaks were observed. That peaks covers range from red to blue. MOS-structures with nanoballs incrusted in SiO 2 were manufactured. For those structures, differential Voltage-Capacity (C-V) and Conductivity characteristics with frequency and structure variety were obtained. Significant increase of differential capacity in an accumulation region was observed. Frequency dependence is obvious. Also Static volt-ampere characteristic was obtained with dependence of Temperature and lighting of a sample. Characteristics have diode type. Photo effect observed at room temperature.</description><identifier>ISSN: 1815-3712</identifier><identifier>ISBN: 9781424445714</identifier><identifier>ISBN: 142444571X</identifier><identifier>DOI: 10.1109/EDM.2009.5173913</identifier><identifier>LCCN: 2009903976</identifier><language>eng</language><publisher>IEEE</publisher><subject>C-V ; Capacitance-voltage characteristics ; Conductivity ; Diodes ; Frequency dependence ; Manufacturing ; MOS-structures ; nanoballs ; Nanocrystal ; nanopowder ; Photoluminescence ; Raman scattering ; Silicon ; Temperature dependence ; Voltage</subject><ispartof>2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, 2009, p.7-11</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5173913$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5173913$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Voshchenkov, A.A.</creatorcontrib><creatorcontrib>Efremov, M.D.</creatorcontrib><creatorcontrib>Antonenko, A.H.</creatorcontrib><creatorcontrib>Kamayev, G.H.</creatorcontrib><creatorcontrib>Volodin, V.A.</creatorcontrib><creatorcontrib>Arzhannikova, S.A.</creatorcontrib><creatorcontrib>Vishnyakov, A.V.</creatorcontrib><creatorcontrib>Marin, D.V.</creatorcontrib><creatorcontrib>Gismatulin, A.A.</creatorcontrib><title>The electrical properties of MOS-structures with silicon nanoballs incrusted in SiO2 layer</title><title>2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices</title><addtitle>EDM</addtitle><description>Series of nanopowder were manufactured, for which peak was observed in Raman's spectrum. That peak corresponds to Raman scattering on monocrystalline silicon. In photoluminescence spectra broad peaks were observed. That peaks covers range from red to blue. MOS-structures with nanoballs incrusted in SiO 2 were manufactured. For those structures, differential Voltage-Capacity (C-V) and Conductivity characteristics with frequency and structure variety were obtained. Significant increase of differential capacity in an accumulation region was observed. Frequency dependence is obvious. Also Static volt-ampere characteristic was obtained with dependence of Temperature and lighting of a sample. Characteristics have diode type. Photo effect observed at room temperature.</description><subject>C-V</subject><subject>Capacitance-voltage characteristics</subject><subject>Conductivity</subject><subject>Diodes</subject><subject>Frequency dependence</subject><subject>Manufacturing</subject><subject>MOS-structures</subject><subject>nanoballs</subject><subject>Nanocrystal</subject><subject>nanopowder</subject><subject>Photoluminescence</subject><subject>Raman scattering</subject><subject>Silicon</subject><subject>Temperature dependence</subject><subject>Voltage</subject><issn>1815-3712</issn><isbn>9781424445714</isbn><isbn>142444571X</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkE1LAzEYhANasNbeBS_5A1vz5mOTHKXWKrTsoT15KZtsQiNxtyQp0n_vip3LDMPDHAahRyALAKKfV6_bBSVELwRIpoHdoLmWCjjlnAsJ_BZNQYGomAQ6Qfd_qCZMy_oOzXP-IqO4YFTBFH3ujw676GxJwbYRn9JwcqkEl_Hg8bbZVbmksy3nNDY_oRxxDjHYocd92w-mjTHj0Nt0zsV1Y8K70FAc24tLD2ji25jd_OoztH9b7Zfv1aZZfyxfNlXQpFSK1pKymhjPNamNMVBLy7zptOiso87TTnA1MgJAEglGUM6YV5Jbo6DzbIae_meDc-5wSuG7TZfD9Rn2C6v8VMs</recordid><startdate>200907</startdate><enddate>200907</enddate><creator>Voshchenkov, A.A.</creator><creator>Efremov, M.D.</creator><creator>Antonenko, A.H.</creator><creator>Kamayev, G.H.</creator><creator>Volodin, V.A.</creator><creator>Arzhannikova, S.A.</creator><creator>Vishnyakov, A.V.</creator><creator>Marin, D.V.</creator><creator>Gismatulin, A.A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200907</creationdate><title>The electrical properties of MOS-structures with silicon nanoballs incrusted in SiO2 layer</title><author>Voshchenkov, A.A. ; Efremov, M.D. ; Antonenko, A.H. ; Kamayev, G.H. ; Volodin, V.A. ; Arzhannikova, S.A. ; Vishnyakov, A.V. ; Marin, D.V. ; Gismatulin, A.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-82672360bf4906bbb167c3fbd95dce2ef2d5486725117071b52433f874cb81df3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>C-V</topic><topic>Capacitance-voltage characteristics</topic><topic>Conductivity</topic><topic>Diodes</topic><topic>Frequency dependence</topic><topic>Manufacturing</topic><topic>MOS-structures</topic><topic>nanoballs</topic><topic>Nanocrystal</topic><topic>nanopowder</topic><topic>Photoluminescence</topic><topic>Raman scattering</topic><topic>Silicon</topic><topic>Temperature dependence</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Voshchenkov, A.A.</creatorcontrib><creatorcontrib>Efremov, M.D.</creatorcontrib><creatorcontrib>Antonenko, A.H.</creatorcontrib><creatorcontrib>Kamayev, G.H.</creatorcontrib><creatorcontrib>Volodin, V.A.</creatorcontrib><creatorcontrib>Arzhannikova, S.A.</creatorcontrib><creatorcontrib>Vishnyakov, A.V.</creatorcontrib><creatorcontrib>Marin, D.V.</creatorcontrib><creatorcontrib>Gismatulin, A.A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Voshchenkov, A.A.</au><au>Efremov, M.D.</au><au>Antonenko, A.H.</au><au>Kamayev, G.H.</au><au>Volodin, V.A.</au><au>Arzhannikova, S.A.</au><au>Vishnyakov, A.V.</au><au>Marin, D.V.</au><au>Gismatulin, A.A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The electrical properties of MOS-structures with silicon nanoballs incrusted in SiO2 layer</atitle><btitle>2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices</btitle><stitle>EDM</stitle><date>2009-07</date><risdate>2009</risdate><spage>7</spage><epage>11</epage><pages>7-11</pages><issn>1815-3712</issn><isbn>9781424445714</isbn><isbn>142444571X</isbn><abstract>Series of nanopowder were manufactured, for which peak was observed in Raman's spectrum. That peak corresponds to Raman scattering on monocrystalline silicon. In photoluminescence spectra broad peaks were observed. That peaks covers range from red to blue. MOS-structures with nanoballs incrusted in SiO 2 were manufactured. For those structures, differential Voltage-Capacity (C-V) and Conductivity characteristics with frequency and structure variety were obtained. Significant increase of differential capacity in an accumulation region was observed. Frequency dependence is obvious. Also Static volt-ampere characteristic was obtained with dependence of Temperature and lighting of a sample. Characteristics have diode type. Photo effect observed at room temperature.</abstract><pub>IEEE</pub><doi>10.1109/EDM.2009.5173913</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1815-3712 |
| ispartof | 2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, 2009, p.7-11 |
| issn | 1815-3712 |
| language | eng |
| recordid | cdi_ieee_primary_5173913 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | C-V Capacitance-voltage characteristics Conductivity Diodes Frequency dependence Manufacturing MOS-structures nanoballs Nanocrystal nanopowder Photoluminescence Raman scattering Silicon Temperature dependence Voltage |
| title | The electrical properties of MOS-structures with silicon nanoballs incrusted in SiO2 layer |
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