Role of the deep parasitic bipolar device in mitigating the single event transient phenomenon

It was found that the single event transient (SET) phenomenon in logic circuits strongly depends on doping concentrations. We think that two parasitic bipolar devices located under a MOS gate with low channel doping concentration suppress SET. Radiation induced electrons are transferred from a drain...

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Bibliographische Detailangaben
Hauptverfasser:	Mikami, N., Nakauchi, T., Oyama, A., Kobayashi, H., Usui, H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Alpha particles Circuit testing Doping Error analysis Logic circuit Logic circuits Monitoring Neutrons parasitic bipolar transistor Performance evaluation Resistors SER SET SEU Single event transient Single event upset soft error rate
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