Time and temperature dependence of early stage Stress-Induced-Voiding in Cu/low-k interconnects

The time and temperature dependence of Stress-Induced-Voiding below and in copper VIA's with a diameter of 80 nm integrated in a k = 2.5 material was studied. The focus was on the early phase of the voiding process. To accelerate the degradation, test structures with big metal plates below and/...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Croes, K., Wilson, C.J., Lofrano, M., Travaly, Y., De Roest, D., Tokei, Z., Beyer, G.P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Acceleration BEOL Copper Dielectric materials FEM Grain boundaries Life estimation Reservoirs Stress-Induced-Voiding Temperature dependence Testing Thermal degradation Thermal stresses Voiding Below VIA Voiding In VIA
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