Formation of USJ with cluster implants for 32nm node and beyond

Cluster Ion implantation is an attractive alternative approach to realize applications in semiconductor devices at 32 nm node and beyond. Cluster ions have a special property of making self-amorphous layer even at a lower dose. Here we will discuss the self-amorphizing properties of heavier cluster...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sekar, K., Krull, W.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Atomic beams Atomic measurements Boron Electrical resistance measurement Fabrication Implants Ion implantation Semiconductor devices Throughput
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