High mobility SiGe shell-Si core omega gate pFETS

Omega gate type pFETs with SiGe shell-Si core are demonstrated that show 30% mobility enhancement for (110) oriented fins and 46% mobility enhancement for (100) oriented fins compared to Si omega gate devices. Performance improvement is demonstrated because of higher mobility and inherent epitaxial...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Adhikari, H., Harris, H.R., Smith, C.E., Ji-Woon Yang, Coss, B., Parthasarathy, S., Bich-Yen Nguyen, Patruno, P., Krishnamohan, T., Cayrefourcq, I., Majhi, P., Jammy, R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Compressive stress Dielectric substrates FETs FinFETs Germanium silicon alloys Jamming MOSFETs Scattering Silicon germanium Very large scale integration
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Omega gate type pFETs with SiGe shell-Si core are demonstrated that show 30% mobility enhancement for (110) oriented fins and 46% mobility enhancement for (100) oriented fins compared to Si omega gate devices. Performance improvement is demonstrated because of higher mobility and inherent epitaxial strain, while the external resistance in the two SiGe and Si omega FETs is comparable. Performance can further be improved by uniaxial compressive stress.
ISSN:	1524-766X 2690-8174
DOI:	10.1109/VTSA.2009.5159327