Fabrication of trench isolation and trench power MOSFETs in a smart power IC Technology with a single trench unit process
We report on using a single trench unit process for the trench isolation and for the trench power MOSFET of a common-drain smart power IC technology. The trench power MOSFET has a maximum specific on-resistance, (R on ldrA), below 50 mOmega-mm 2 and a typical breakdown voltage, V br , of 95 V. The t...
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| creator | Kadow, C. Decker, S. Dibra, D. Krischke, N. Lanzerstorfer, S. Maier, H. Meyer, T. Vannucci, N. Zink, R. |
| description | We report on using a single trench unit process for the trench isolation and for the trench power MOSFET of a common-drain smart power IC technology. The trench power MOSFET has a maximum specific on-resistance, (R on ldrA), below 50 mOmega-mm 2 and a typical breakdown voltage, V br , of 95 V. The trench isolation provides well isolation up to 90 V. Using a single trench unit process for both devices results in low process costs. In addition both power and logic areas of a chip benefit from the trench process. |
| doi_str_mv | 10.1109/ISPSD.2009.5158042 |
| format | Conference Proceeding |
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The trench power MOSFET has a maximum specific on-resistance, (R on ldrA), below 50 mOmega-mm 2 and a typical breakdown voltage, V br , of 95 V. The trench isolation provides well isolation up to 90 V. Using a single trench unit process for both devices results in low process costs. 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In addition both power and logic areas of a chip benefit from the trench process.</description><subject>Automotive engineering</subject><subject>Avalanche breakdown</subject><subject>Costs</subject><subject>Electrostatics</subject><subject>Fabrication</subject><subject>Isolation technology</subject><subject>Logic devices</subject><subject>MOSFETs</subject><subject>Potential well</subject><subject>Power integrated circuits</subject><issn>1063-6854</issn><issn>1946-0201</issn><isbn>9781424435258</isbn><isbn>1424435250</isbn><isbn>9781424446735</isbn><isbn>1424446732</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFkNtOAjEQhuuBREReQG_6Aos9Tbe9NChKgsEEvCZ1dxZq1i3ZriG8vSVAnJtJ5vvzZWYIuedsxDmzj9PFx-J5JBizI-BgmBIXZGhzw5VQSulcwiXpc6t0xgTjV_9MggBznRjTMtMGVI_cJo2xB625IcMYv1kqBcIa6JP9xH21vnCdDw0NFe1abIoN9THUx5lryvNwG3bY0vf5YvKyjNQnRuOPa7sTmI7pEotNE-qw3tOd7zaHgG_WNZ4Nv41P6TYUGOMd6VWujjg89QH5TN7xWzabv07HT7PM8xy6zAIXHLRmriqxzJWWDAEMVoVSYNKFubFSGJGbUji0aEsBpTSA0pROgZYD8nD0ekRcbVufVt6vTl-VfzllZHs</recordid><startdate>200906</startdate><enddate>200906</enddate><creator>Kadow, C.</creator><creator>Decker, S.</creator><creator>Dibra, D.</creator><creator>Krischke, N.</creator><creator>Lanzerstorfer, S.</creator><creator>Maier, H.</creator><creator>Meyer, T.</creator><creator>Vannucci, N.</creator><creator>Zink, R.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200906</creationdate><title>Fabrication of trench isolation and trench power MOSFETs in a smart power IC Technology with a single trench unit process</title><author>Kadow, C. ; Decker, S. ; Dibra, D. ; Krischke, N. ; Lanzerstorfer, S. ; Maier, H. ; Meyer, T. ; Vannucci, N. ; Zink, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-951215660afded74630e558efc4458685789328278d2ae9e9d25d385e38da4563</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Automotive engineering</topic><topic>Avalanche breakdown</topic><topic>Costs</topic><topic>Electrostatics</topic><topic>Fabrication</topic><topic>Isolation technology</topic><topic>Logic devices</topic><topic>MOSFETs</topic><topic>Potential well</topic><topic>Power integrated circuits</topic><toplevel>online_resources</toplevel><creatorcontrib>Kadow, C.</creatorcontrib><creatorcontrib>Decker, S.</creatorcontrib><creatorcontrib>Dibra, D.</creatorcontrib><creatorcontrib>Krischke, N.</creatorcontrib><creatorcontrib>Lanzerstorfer, S.</creatorcontrib><creatorcontrib>Maier, H.</creatorcontrib><creatorcontrib>Meyer, T.</creatorcontrib><creatorcontrib>Vannucci, N.</creatorcontrib><creatorcontrib>Zink, R.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kadow, C.</au><au>Decker, S.</au><au>Dibra, D.</au><au>Krischke, N.</au><au>Lanzerstorfer, S.</au><au>Maier, H.</au><au>Meyer, T.</au><au>Vannucci, N.</au><au>Zink, R.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Fabrication of trench isolation and trench power MOSFETs in a smart power IC Technology with a single trench unit process</atitle><btitle>2009 21st International Symposium on Power Semiconductor Devices & IC's</btitle><stitle>ISPSD</stitle><date>2009-06</date><risdate>2009</risdate><spage>224</spage><epage>226</epage><pages>224-226</pages><issn>1063-6854</issn><eissn>1946-0201</eissn><isbn>9781424435258</isbn><isbn>1424435250</isbn><eisbn>9781424446735</eisbn><eisbn>1424446732</eisbn><abstract>We report on using a single trench unit process for the trench isolation and for the trench power MOSFET of a common-drain smart power IC technology. The trench power MOSFET has a maximum specific on-resistance, (R on ldrA), below 50 mOmega-mm 2 and a typical breakdown voltage, V br , of 95 V. The trench isolation provides well isolation up to 90 V. Using a single trench unit process for both devices results in low process costs. In addition both power and logic areas of a chip benefit from the trench process.</abstract><pub>IEEE</pub><doi>10.1109/ISPSD.2009.5158042</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1063-6854 |
| ispartof | 2009 21st International Symposium on Power Semiconductor Devices & IC's, 2009, p.224-226 |
| issn | 1063-6854 1946-0201 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Automotive engineering Avalanche breakdown Costs Electrostatics Fabrication Isolation technology Logic devices MOSFETs Potential well Power integrated circuits |
| title | Fabrication of trench isolation and trench power MOSFETs in a smart power IC Technology with a single trench unit process |
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