Impact of intra-die thermal variation on accurate MOSFET gate-length measurement

It is known that significant intra-die thermal absorption variation is caused by non-optimized rapid thermal anneal (RTA) conditions and the variation depends on the local pattern density of various types of exposed stacks of the wafer. This variation can create errors in the electrical measurement...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Ahsan, I., Schroder, D.K., Nowak, E., Gluschenkov, O., Zamdmer, N., Logan, R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Absorption Capacitors Electric variables measurement Length measurement MOSFET circuits Rapid thermal annealing Reflectivity Resistors Shape measurement Testing
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