RF receiver front-end with +3dBm out-of-band IIP3 and 3.4dB NF in 45nm CMOS for 3G and beyond
A receiver front-end in standard 45 nm CMOS technology is presented. The receiver achieves WCDMA system performance without requirement for an inter-stage SAW filter. High out-of-band linearity performance is achieved by reducing the RF circuitry and filtering the out-of-band blockers after direct c...
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| creator | Yanduru, N.K. Griffith, D. Low, K.-M. Balsara, P.T. |
| description | A receiver front-end in standard 45 nm CMOS technology is presented. The receiver achieves WCDMA system performance without requirement for an inter-stage SAW filter. High out-of-band linearity performance is achieved by reducing the RF circuitry and filtering the out-of-band blockers after direct conversion. For the receiver at 1.9 GHz, a +3.1 dBm IIP3 is achieved for blockers at 40 MHz and 80 MHz away from the RF carrier. NF is 3.4 dB, out-of-band IIP2 is +51 dBm and current is 19.5 mA for both I, Q channels with VDD of 1.4 V. LO is provided using an on-chip VCO followed by a quadrature divider. |
| doi_str_mv | 10.1109/RFIC.2009.5135478 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5135478</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5135478</ieee_id><sourcerecordid>5135478</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-8962cdd7ade0ac5a115a54946adc3a44e07af5e1463176dea2de22921b27c4ac3</originalsourceid><addsrcrecordid>eNpVkMtOwzAURM1LopR-AGLjPXLw9bXjeEkjUiIVikq3qHLjGxFEEpSkoP49r25YzWjOaBbD2AXICEC662WWp5GS0kUG0GibHLCJswlopTWiTeQhGym0RkjnzNE_ZvGYjcAoJ5QBe8rO-v5VSmkhdiP2vMx4RwVVH9TxsmubQVAT-Gc1vPArDNOat9tBtKXY-O84zx-R_xiMdJjyh4xXDdemqXl6v3jiZdtxnP0WNrRrm3DOTkr_1tNkr2O2ym5X6Z2YL2Z5ejMXlZODSFysihCsDyR9YTyA8UY7HftQoNeapPWlIdAxgo0DeRVIKadgo2yhfYFjdvk3WxHR-r2rat_t1vuj8At32FQP</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>RF receiver front-end with +3dBm out-of-band IIP3 and 3.4dB NF in 45nm CMOS for 3G and beyond</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Yanduru, N.K. ; Griffith, D. ; Low, K.-M. ; Balsara, P.T.</creator><creatorcontrib>Yanduru, N.K. ; Griffith, D. ; Low, K.-M. ; Balsara, P.T.</creatorcontrib><description>A receiver front-end in standard 45 nm CMOS technology is presented. The receiver achieves WCDMA system performance without requirement for an inter-stage SAW filter. High out-of-band linearity performance is achieved by reducing the RF circuitry and filtering the out-of-band blockers after direct conversion. For the receiver at 1.9 GHz, a +3.1 dBm IIP3 is achieved for blockers at 40 MHz and 80 MHz away from the RF carrier. NF is 3.4 dB, out-of-band IIP2 is +51 dBm and current is 19.5 mA for both I, Q channels with VDD of 1.4 V. LO is provided using an on-chip VCO followed by a quadrature divider.</description><identifier>ISSN: 1529-2517</identifier><identifier>ISBN: 9781424433773</identifier><identifier>ISBN: 1424433770</identifier><identifier>EISSN: 2375-0995</identifier><identifier>EISBN: 9781424433780</identifier><identifier>EISBN: 1424433789</identifier><identifier>DOI: 10.1109/RFIC.2009.5135478</identifier><language>eng</language><publisher>IEEE</publisher><subject>45 nm ; Circuits ; CMOS ; CMOS technology ; Filtering ; Linearity ; Multiaccess communication ; Noise measurement ; Radio frequency ; RF receivers ; SAW filters ; System performance ; Voltage-controlled oscillators ; WCDMA</subject><ispartof>2009 IEEE Radio Frequency Integrated Circuits Symposium, 2009, p.9-12</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5135478$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2057,27924,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5135478$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yanduru, N.K.</creatorcontrib><creatorcontrib>Griffith, D.</creatorcontrib><creatorcontrib>Low, K.-M.</creatorcontrib><creatorcontrib>Balsara, P.T.</creatorcontrib><title>RF receiver front-end with +3dBm out-of-band IIP3 and 3.4dB NF in 45nm CMOS for 3G and beyond</title><title>2009 IEEE Radio Frequency Integrated Circuits Symposium</title><addtitle>RFIC</addtitle><description>A receiver front-end in standard 45 nm CMOS technology is presented. The receiver achieves WCDMA system performance without requirement for an inter-stage SAW filter. High out-of-band linearity performance is achieved by reducing the RF circuitry and filtering the out-of-band blockers after direct conversion. For the receiver at 1.9 GHz, a +3.1 dBm IIP3 is achieved for blockers at 40 MHz and 80 MHz away from the RF carrier. NF is 3.4 dB, out-of-band IIP2 is +51 dBm and current is 19.5 mA for both I, Q channels with VDD of 1.4 V. LO is provided using an on-chip VCO followed by a quadrature divider.</description><subject>45 nm</subject><subject>Circuits</subject><subject>CMOS</subject><subject>CMOS technology</subject><subject>Filtering</subject><subject>Linearity</subject><subject>Multiaccess communication</subject><subject>Noise measurement</subject><subject>Radio frequency</subject><subject>RF receivers</subject><subject>SAW filters</subject><subject>System performance</subject><subject>Voltage-controlled oscillators</subject><subject>WCDMA</subject><issn>1529-2517</issn><issn>2375-0995</issn><isbn>9781424433773</isbn><isbn>1424433770</isbn><isbn>9781424433780</isbn><isbn>1424433789</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkMtOwzAURM1LopR-AGLjPXLw9bXjeEkjUiIVikq3qHLjGxFEEpSkoP49r25YzWjOaBbD2AXICEC662WWp5GS0kUG0GibHLCJswlopTWiTeQhGym0RkjnzNE_ZvGYjcAoJ5QBe8rO-v5VSmkhdiP2vMx4RwVVH9TxsmubQVAT-Gc1vPArDNOat9tBtKXY-O84zx-R_xiMdJjyh4xXDdemqXl6v3jiZdtxnP0WNrRrm3DOTkr_1tNkr2O2ym5X6Z2YL2Z5ejMXlZODSFysihCsDyR9YTyA8UY7HftQoNeapPWlIdAxgo0DeRVIKadgo2yhfYFjdvk3WxHR-r2rat_t1vuj8At32FQP</recordid><startdate>200906</startdate><enddate>200906</enddate><creator>Yanduru, N.K.</creator><creator>Griffith, D.</creator><creator>Low, K.-M.</creator><creator>Balsara, P.T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200906</creationdate><title>RF receiver front-end with +3dBm out-of-band IIP3 and 3.4dB NF in 45nm CMOS for 3G and beyond</title><author>Yanduru, N.K. ; Griffith, D. ; Low, K.-M. ; Balsara, P.T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-8962cdd7ade0ac5a115a54946adc3a44e07af5e1463176dea2de22921b27c4ac3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>45 nm</topic><topic>Circuits</topic><topic>CMOS</topic><topic>CMOS technology</topic><topic>Filtering</topic><topic>Linearity</topic><topic>Multiaccess communication</topic><topic>Noise measurement</topic><topic>Radio frequency</topic><topic>RF receivers</topic><topic>SAW filters</topic><topic>System performance</topic><topic>Voltage-controlled oscillators</topic><topic>WCDMA</topic><toplevel>online_resources</toplevel><creatorcontrib>Yanduru, N.K.</creatorcontrib><creatorcontrib>Griffith, D.</creatorcontrib><creatorcontrib>Low, K.-M.</creatorcontrib><creatorcontrib>Balsara, P.T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yanduru, N.K.</au><au>Griffith, D.</au><au>Low, K.-M.</au><au>Balsara, P.T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>RF receiver front-end with +3dBm out-of-band IIP3 and 3.4dB NF in 45nm CMOS for 3G and beyond</atitle><btitle>2009 IEEE Radio Frequency Integrated Circuits Symposium</btitle><stitle>RFIC</stitle><date>2009-06</date><risdate>2009</risdate><spage>9</spage><epage>12</epage><pages>9-12</pages><issn>1529-2517</issn><eissn>2375-0995</eissn><isbn>9781424433773</isbn><isbn>1424433770</isbn><eisbn>9781424433780</eisbn><eisbn>1424433789</eisbn><abstract>A receiver front-end in standard 45 nm CMOS technology is presented. The receiver achieves WCDMA system performance without requirement for an inter-stage SAW filter. High out-of-band linearity performance is achieved by reducing the RF circuitry and filtering the out-of-band blockers after direct conversion. For the receiver at 1.9 GHz, a +3.1 dBm IIP3 is achieved for blockers at 40 MHz and 80 MHz away from the RF carrier. NF is 3.4 dB, out-of-band IIP2 is +51 dBm and current is 19.5 mA for both I, Q channels with VDD of 1.4 V. LO is provided using an on-chip VCO followed by a quadrature divider.</abstract><pub>IEEE</pub><doi>10.1109/RFIC.2009.5135478</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
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| ispartof | 2009 IEEE Radio Frequency Integrated Circuits Symposium, 2009, p.9-12 |
| issn | 1529-2517 2375-0995 |
| language | eng |
| recordid | cdi_ieee_primary_5135478 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | 45 nm Circuits CMOS CMOS technology Filtering Linearity Multiaccess communication Noise measurement Radio frequency RF receivers SAW filters System performance Voltage-controlled oscillators WCDMA |
| title | RF receiver front-end with +3dBm out-of-band IIP3 and 3.4dB NF in 45nm CMOS for 3G and beyond |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T12%3A08%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=RF%20receiver%20front-end%20with%20+3dBm%20out-of-band%20IIP3%20and%203.4dB%20NF%20in%2045nm%20CMOS%20for%203G%20and%20beyond&rft.btitle=2009%20IEEE%20Radio%20Frequency%20Integrated%20Circuits%20Symposium&rft.au=Yanduru,%20N.K.&rft.date=2009-06&rft.spage=9&rft.epage=12&rft.pages=9-12&rft.issn=1529-2517&rft.eissn=2375-0995&rft.isbn=9781424433773&rft.isbn_list=1424433770&rft_id=info:doi/10.1109/RFIC.2009.5135478&rft_dat=%3Cieee_6IE%3E5135478%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424433780&rft.eisbn_list=1424433789&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5135478&rfr_iscdi=true |