10 and 26 GHz differential VCOs using InP HBTs
We have built 10 and 26 GHz differential VCOs using InP HBTs. Both oscillators use a 3 stage emitter coupled pair ring section. The 10 GHz VCO is connected in the well known fashion but the 26 GHz circuit uses a patented summed output from each of the three ECP (Emitter Coupled Pair) stages. The cir...
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container_end_page | 1510 vol.3 |
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container_issue | |
container_start_page | 1507 |
container_title | |
container_volume | 3 |
creator | Montgomery, R.K. Humphrey, D.A. Hamm, R. Ren, F. Malik, R.J. Kopf, R.F. Tate, A. Smith, P.R. Ryan, R.W. Lin, J. Chen, Y.K. |
description | We have built 10 and 26 GHz differential VCOs using InP HBTs. Both oscillators use a 3 stage emitter coupled pair ring section. The 10 GHz VCO is connected in the well known fashion but the 26 GHz circuit uses a patented summed output from each of the three ECP (Emitter Coupled Pair) stages. The circuits are powered from a single 5 V supply consuming 250 mW. The chip size is 870/spl times/975 /spl mu/m/sup 2/. The phase noise at a 100 kHz offset for the 10 and 26 GHz oscillators is 83 dBc/Hz and -70 dBc/Hz respectively. |
doi_str_mv | 10.1109/MWSYM.1996.512222 |
format | Conference Proceeding |
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Both oscillators use a 3 stage emitter coupled pair ring section. The 10 GHz VCO is connected in the well known fashion but the 26 GHz circuit uses a patented summed output from each of the three ECP (Emitter Coupled Pair) stages. The circuits are powered from a single 5 V supply consuming 250 mW. The chip size is 870/spl times/975 /spl mu/m/sup 2/. The phase noise at a 100 kHz offset for the 10 and 26 GHz oscillators is 83 dBc/Hz and -70 dBc/Hz respectively.</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 0780332466</identifier><identifier>ISBN: 9780780332461</identifier><identifier>EISSN: 2576-7216</identifier><identifier>DOI: 10.1109/MWSYM.1996.512222</identifier><language>eng</language><publisher>IEEE</publisher><subject>Coupling circuits ; Frequency estimation ; Gallium arsenide ; Heterojunction bipolar transistors ; Indium phosphide ; Phase noise ; Ring oscillators ; Tin ; Voltage ; Voltage-controlled oscillators</subject><ispartof>1996 IEEE MTT-S International Microwave Symposium Digest, 1996, Vol.3, p.1507-1510 vol.3</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/512222$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,781,785,790,791,2059,4051,4052,27930,54925</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/512222$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Montgomery, R.K.</creatorcontrib><creatorcontrib>Humphrey, D.A.</creatorcontrib><creatorcontrib>Hamm, R.</creatorcontrib><creatorcontrib>Ren, F.</creatorcontrib><creatorcontrib>Malik, R.J.</creatorcontrib><creatorcontrib>Kopf, R.F.</creatorcontrib><creatorcontrib>Tate, A.</creatorcontrib><creatorcontrib>Smith, P.R.</creatorcontrib><creatorcontrib>Ryan, R.W.</creatorcontrib><creatorcontrib>Lin, J.</creatorcontrib><creatorcontrib>Chen, Y.K.</creatorcontrib><title>10 and 26 GHz differential VCOs using InP HBTs</title><title>1996 IEEE MTT-S International Microwave Symposium Digest</title><addtitle>MWSYM</addtitle><description>We have built 10 and 26 GHz differential VCOs using InP HBTs. Both oscillators use a 3 stage emitter coupled pair ring section. The 10 GHz VCO is connected in the well known fashion but the 26 GHz circuit uses a patented summed output from each of the three ECP (Emitter Coupled Pair) stages. The circuits are powered from a single 5 V supply consuming 250 mW. The chip size is 870/spl times/975 /spl mu/m/sup 2/. The phase noise at a 100 kHz offset for the 10 and 26 GHz oscillators is 83 dBc/Hz and -70 dBc/Hz respectively.</description><subject>Coupling circuits</subject><subject>Frequency estimation</subject><subject>Gallium arsenide</subject><subject>Heterojunction bipolar transistors</subject><subject>Indium phosphide</subject><subject>Phase noise</subject><subject>Ring oscillators</subject><subject>Tin</subject><subject>Voltage</subject><subject>Voltage-controlled oscillators</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>0780332466</isbn><isbn>9780780332461</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tKAzEUQIMPcKz9AF3lB2a8N4-byVIH7RRaKlhfq5LJJBKpg0zqQr_eQj2bsztwGLtEqBDBXi9fHt-WFVpLlUax54gVQhsqjUA6ZudgapBSKKITVgAqW5LSr2dsmvMH7FFaC20LViFwN_RcEJ-1v7xPMYYxDLvktvy5WWX-ndPwzufDA29v1_mCnUa3zWH67wl7ur9bN225WM3mzc2iTGjErnRYG6W8D1rqaCMKbzobBQB1tbYdYO1rwl5LZ4KknoTxEbuowRpHJvRywq4O3RRC2HyN6dONP5vDqfwDQvZCAQ</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Montgomery, R.K.</creator><creator>Humphrey, D.A.</creator><creator>Hamm, R.</creator><creator>Ren, F.</creator><creator>Malik, R.J.</creator><creator>Kopf, R.F.</creator><creator>Tate, A.</creator><creator>Smith, P.R.</creator><creator>Ryan, R.W.</creator><creator>Lin, J.</creator><creator>Chen, Y.K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>10 and 26 GHz differential VCOs using InP HBTs</title><author>Montgomery, R.K. ; Humphrey, D.A. ; Hamm, R. ; Ren, F. ; Malik, R.J. ; Kopf, R.F. ; Tate, A. ; Smith, P.R. ; Ryan, R.W. ; Lin, J. ; Chen, Y.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-a18744cce535f9f12c7b9f2006b859b018c861d53a7e36d627cf1bf5097a67ed3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Coupling circuits</topic><topic>Frequency estimation</topic><topic>Gallium arsenide</topic><topic>Heterojunction bipolar transistors</topic><topic>Indium phosphide</topic><topic>Phase noise</topic><topic>Ring oscillators</topic><topic>Tin</topic><topic>Voltage</topic><topic>Voltage-controlled oscillators</topic><toplevel>online_resources</toplevel><creatorcontrib>Montgomery, R.K.</creatorcontrib><creatorcontrib>Humphrey, D.A.</creatorcontrib><creatorcontrib>Hamm, R.</creatorcontrib><creatorcontrib>Ren, F.</creatorcontrib><creatorcontrib>Malik, R.J.</creatorcontrib><creatorcontrib>Kopf, R.F.</creatorcontrib><creatorcontrib>Tate, A.</creatorcontrib><creatorcontrib>Smith, P.R.</creatorcontrib><creatorcontrib>Ryan, R.W.</creatorcontrib><creatorcontrib>Lin, J.</creatorcontrib><creatorcontrib>Chen, Y.K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Montgomery, R.K.</au><au>Humphrey, D.A.</au><au>Hamm, R.</au><au>Ren, F.</au><au>Malik, R.J.</au><au>Kopf, R.F.</au><au>Tate, A.</au><au>Smith, P.R.</au><au>Ryan, R.W.</au><au>Lin, J.</au><au>Chen, Y.K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>10 and 26 GHz differential VCOs using InP HBTs</atitle><btitle>1996 IEEE MTT-S International Microwave Symposium Digest</btitle><stitle>MWSYM</stitle><date>1996</date><risdate>1996</risdate><volume>3</volume><spage>1507</spage><epage>1510 vol.3</epage><pages>1507-1510 vol.3</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>0780332466</isbn><isbn>9780780332461</isbn><abstract>We have built 10 and 26 GHz differential VCOs using InP HBTs. Both oscillators use a 3 stage emitter coupled pair ring section. The 10 GHz VCO is connected in the well known fashion but the 26 GHz circuit uses a patented summed output from each of the three ECP (Emitter Coupled Pair) stages. The circuits are powered from a single 5 V supply consuming 250 mW. The chip size is 870/spl times/975 /spl mu/m/sup 2/. The phase noise at a 100 kHz offset for the 10 and 26 GHz oscillators is 83 dBc/Hz and -70 dBc/Hz respectively.</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.1996.512222</doi></addata></record> |
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identifier | ISSN: 0149-645X |
ispartof | 1996 IEEE MTT-S International Microwave Symposium Digest, 1996, Vol.3, p.1507-1510 vol.3 |
issn | 0149-645X 2576-7216 |
language | eng |
recordid | cdi_ieee_primary_512222 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Coupling circuits Frequency estimation Gallium arsenide Heterojunction bipolar transistors Indium phosphide Phase noise Ring oscillators Tin Voltage Voltage-controlled oscillators |
title | 10 and 26 GHz differential VCOs using InP HBTs |
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