Optimizing the vertical IGBT structure-the NPT concept as the most economic and electrically ideal solution for a 1200 V-IGBT

In this paper a new low loss 1200 V IGBT is discussed: optimizing the vertical structure of a fast switching IGBT in economic standard NPT-DMOS-technology, will result (without increase of switching losses) in a lowered on state voltage close to 2 V, a value which until now was believed to be reacha...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Laska, T., Fugger, J., Hirler, F., Scholz, W.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge carrier processes Computer simulation Current measurement Energy measurement Insulated gate bipolar transistors Leakage current Loss measurement Power generation economics Semiconductor device measurement Voltage
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