Numerical Simulation of a DNA Sensor Based on the CNT-Gold Island Structure

A numerical simulation has been performed for the DNA sensors based on the field-effect-transistor (FET) structure of a CNT with the gold island- attached on the CNT tube. The model uses the Poisson-drift-diffusion theory for the CNT transistor and considers the charge exchange between the interface...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Gyu-sik Choe, Jun-Myung Woo, Young June Park, Young Wook Chang, Jeseung Oh, Kyung-Hwa Yoo
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Boundary conditions Charge carrier processes DNA Electrodes Electrostatics FETs Gold Joining processes Numerical simulation Poisson equations
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