Both NOR and NAND Embedded Hybrid Flash for S-SIM Application Using 90 nm Process Technology
We have firstly demonstrated a hybrid flash including both NOR and NAND cell in a single chip using 90 nm logic technology for S-SIM (Super-Subscriber Identity Module) application. The memory sizes are 16 MB NAND and 768 kB NOR flash, respectively. The flash memory cells exhibited over 10 k-cycle en...
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| creator | Jeong-Uk Han Yong Kyu Lee Chang Min Jeon Jido Ryu Eun-Mi Hong Seungjin Yang Youngho Kim Hyucksoo Yang Hyunkhe Yoo Jaemin Yu Hoonjin Bang Seung-Won Lee ByeongHoon Lee Daesop Lee Eunseung Jung Chilhee Chung |
| description | We have firstly demonstrated a hybrid flash including both NOR and NAND cell in a single chip using 90 nm logic technology for S-SIM (Super-Subscriber Identity Module) application. The memory sizes are 16 MB NAND and 768 kB NOR flash, respectively. The flash memory cells exhibited over 10 k-cycle endurance and 10-year retention for the successful smart card application. |
| doi_str_mv | 10.1109/IMW.2009.5090582 |
| format | Conference Proceeding |
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The flash memory cells exhibited over 10 k-cycle endurance and 10-year retention for the successful smart card application.</description><subject>Application specific integrated circuits</subject><subject>CMOS technology</subject><subject>Electronic equipment testing</subject><subject>Hybrid integrated circuits</subject><subject>Integrated circuit testing</subject><subject>Large scale integration</subject><subject>Mobile handsets</subject><subject>Smart cards</subject><subject>System testing</subject><subject>Voltage</subject><issn>2159-483X</issn><isbn>9781424437627</isbn><isbn>1424437628</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkEtrwkAURgdaoda6L3Rz_0DsPJPcpbU-AhpLTWkXBRlnJjqQh2Tc5N9XqKuzORz4PkKeGZ0wRvE123xPOKU4URSpSvkdGWOSMsmlFEnMk3sy5ExhJFPxMyCPVzVFxhmXD2Qcgj9QroSSGPMh-X1rLyfIt5-gGwv5NH-HeX1w1joLq_7QeQuLSocTlG0Hu2iXbWB6Plfe6ItvG_gKvjkCUmhq-Oha40KAwplT01btsX8ig1JXwY1vHJFiMS9mq2i9XWaz6TrySC8RSllqYxOrlKFMMW2vS1IjrTMipgpRopBouBVlXBrj7NVwphSMJVrqFMWIvPxnvXNuf-58rbt-f_tG_AHGXlQN</recordid><startdate>200905</startdate><enddate>200905</enddate><creator>Jeong-Uk Han</creator><creator>Yong Kyu Lee</creator><creator>Chang Min Jeon</creator><creator>Jido Ryu</creator><creator>Eun-Mi Hong</creator><creator>Seungjin Yang</creator><creator>Youngho Kim</creator><creator>Hyucksoo Yang</creator><creator>Hyunkhe Yoo</creator><creator>Jaemin Yu</creator><creator>Hoonjin Bang</creator><creator>Seung-Won Lee</creator><creator>ByeongHoon Lee</creator><creator>Daesop Lee</creator><creator>Eunseung Jung</creator><creator>Chilhee Chung</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200905</creationdate><title>Both NOR and NAND Embedded Hybrid Flash for S-SIM Application Using 90 nm Process Technology</title><author>Jeong-Uk Han ; Yong Kyu Lee ; Chang Min Jeon ; Jido Ryu ; Eun-Mi Hong ; Seungjin Yang ; Youngho Kim ; Hyucksoo Yang ; Hyunkhe Yoo ; Jaemin Yu ; Hoonjin Bang ; Seung-Won Lee ; ByeongHoon Lee ; Daesop Lee ; Eunseung Jung ; Chilhee Chung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-944facd7d55c0151ad1428c4dec36059949349c2d3f6fcced1adecf3117a4a893</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Application specific integrated circuits</topic><topic>CMOS technology</topic><topic>Electronic equipment testing</topic><topic>Hybrid integrated circuits</topic><topic>Integrated circuit testing</topic><topic>Large scale integration</topic><topic>Mobile handsets</topic><topic>Smart cards</topic><topic>System testing</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Jeong-Uk Han</creatorcontrib><creatorcontrib>Yong Kyu Lee</creatorcontrib><creatorcontrib>Chang Min Jeon</creatorcontrib><creatorcontrib>Jido Ryu</creatorcontrib><creatorcontrib>Eun-Mi Hong</creatorcontrib><creatorcontrib>Seungjin Yang</creatorcontrib><creatorcontrib>Youngho Kim</creatorcontrib><creatorcontrib>Hyucksoo Yang</creatorcontrib><creatorcontrib>Hyunkhe Yoo</creatorcontrib><creatorcontrib>Jaemin Yu</creatorcontrib><creatorcontrib>Hoonjin Bang</creatorcontrib><creatorcontrib>Seung-Won Lee</creatorcontrib><creatorcontrib>ByeongHoon Lee</creatorcontrib><creatorcontrib>Daesop Lee</creatorcontrib><creatorcontrib>Eunseung Jung</creatorcontrib><creatorcontrib>Chilhee Chung</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jeong-Uk Han</au><au>Yong Kyu Lee</au><au>Chang Min Jeon</au><au>Jido Ryu</au><au>Eun-Mi Hong</au><au>Seungjin Yang</au><au>Youngho Kim</au><au>Hyucksoo Yang</au><au>Hyunkhe Yoo</au><au>Jaemin Yu</au><au>Hoonjin Bang</au><au>Seung-Won Lee</au><au>ByeongHoon Lee</au><au>Daesop Lee</au><au>Eunseung Jung</au><au>Chilhee Chung</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Both NOR and NAND Embedded Hybrid Flash for S-SIM Application Using 90 nm Process Technology</atitle><btitle>2009 IEEE International Memory Workshop</btitle><stitle>IMW</stitle><date>2009-05</date><risdate>2009</risdate><spage>1</spage><epage>2</epage><pages>1-2</pages><issn>2159-483X</issn><isbn>9781424437627</isbn><isbn>1424437628</isbn><abstract>We have firstly demonstrated a hybrid flash including both NOR and NAND cell in a single chip using 90 nm logic technology for S-SIM (Super-Subscriber Identity Module) application. The memory sizes are 16 MB NAND and 768 kB NOR flash, respectively. The flash memory cells exhibited over 10 k-cycle endurance and 10-year retention for the successful smart card application.</abstract><pub>IEEE</pub><doi>10.1109/IMW.2009.5090582</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 2159-483X |
| ispartof | 2009 IEEE International Memory Workshop, 2009, p.1-2 |
| issn | 2159-483X |
| language | eng |
| recordid | cdi_ieee_primary_5090582 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Application specific integrated circuits CMOS technology Electronic equipment testing Hybrid integrated circuits Integrated circuit testing Large scale integration Mobile handsets Smart cards System testing Voltage |
| title | Both NOR and NAND Embedded Hybrid Flash for S-SIM Application Using 90 nm Process Technology |
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