Resist planarization for trench first dual damascene
Resist planarization is applied to trench first dual damascene process in order to enhance focus margin for via lithography after hard mask etch. As a planarization process, resist CMP is better than conventional resist etch back, However, hard mask (HM) erosion by resist CMP causes serious problem...
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| creator | Chibahara, H. Korogi, H. Ono, Y. Saito, T. Yoshikawa, K. Yonekura, K. Furuhashi, T. Tomita, K. Sakaue, H. Ueki, A. Matsumoto, S. Akazawa, M. Miyatake, H. |
| description | Resist planarization is applied to trench first dual damascene process in order to enhance focus margin for via lithography after hard mask etch. As a planarization process, resist CMP is better than conventional resist etch back, However, hard mask (HM) erosion by resist CMP causes serious problem of lessened thickness of Cu. To solve it, the combination of CMP and etch back (C+E) is adopted. This method realizes enhancement of the focus margin and prevention from the hard mask erosion at the same time. |
| doi_str_mv | 10.1109/IITC.2009.5090351 |
| format | Conference Proceeding |
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As a planarization process, resist CMP is better than conventional resist etch back, However, hard mask (HM) erosion by resist CMP causes serious problem of lessened thickness of Cu. To solve it, the combination of CMP and etch back (C+E) is adopted. This method realizes enhancement of the focus margin and prevention from the hard mask erosion at the same time.</description><identifier>ISSN: 2380-632X</identifier><identifier>ISBN: 9781424444922</identifier><identifier>ISBN: 1424444926</identifier><identifier>EISSN: 2380-6338</identifier><identifier>EISBN: 9781424444939</identifier><identifier>EISBN: 1424444934</identifier><identifier>DOI: 10.1109/IITC.2009.5090351</identifier><identifier>LCCN: 2009903594</identifier><language>eng</language><publisher>IEEE</publisher><subject>Chemicals ; Cities and towns ; Dielectrics ; Dry etching ; Lithography ; Planarization ; Resists ; Slurries ; Strips ; Wet etching</subject><ispartof>2009 IEEE International Interconnect Technology Conference, 2009, p.98-100</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5090351$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5090351$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chibahara, H.</creatorcontrib><creatorcontrib>Korogi, H.</creatorcontrib><creatorcontrib>Ono, Y.</creatorcontrib><creatorcontrib>Saito, T.</creatorcontrib><creatorcontrib>Yoshikawa, K.</creatorcontrib><creatorcontrib>Yonekura, K.</creatorcontrib><creatorcontrib>Furuhashi, T.</creatorcontrib><creatorcontrib>Tomita, K.</creatorcontrib><creatorcontrib>Sakaue, H.</creatorcontrib><creatorcontrib>Ueki, A.</creatorcontrib><creatorcontrib>Matsumoto, S.</creatorcontrib><creatorcontrib>Akazawa, M.</creatorcontrib><creatorcontrib>Miyatake, H.</creatorcontrib><title>Resist planarization for trench first dual damascene</title><title>2009 IEEE International Interconnect Technology Conference</title><addtitle>IITC</addtitle><description>Resist planarization is applied to trench first dual damascene process in order to enhance focus margin for via lithography after hard mask etch. As a planarization process, resist CMP is better than conventional resist etch back, However, hard mask (HM) erosion by resist CMP causes serious problem of lessened thickness of Cu. To solve it, the combination of CMP and etch back (C+E) is adopted. This method realizes enhancement of the focus margin and prevention from the hard mask erosion at the same time.</description><subject>Chemicals</subject><subject>Cities and towns</subject><subject>Dielectrics</subject><subject>Dry etching</subject><subject>Lithography</subject><subject>Planarization</subject><subject>Resists</subject><subject>Slurries</subject><subject>Strips</subject><subject>Wet etching</subject><issn>2380-632X</issn><issn>2380-6338</issn><isbn>9781424444922</isbn><isbn>1424444926</isbn><isbn>9781424444939</isbn><isbn>1424444934</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkM1Kw0AURsefgrXmAcRNXiDxzp07ydylBKuBgiBZuCuTZgZH0rRM4kKf3haL4Nl8iwNn8QlxKyGXEvi-rpsqRwDONTAoLc9EwqWRhHSAFZ-LOSoDWaGUufjnEC__HL7NxPUxc2wwXYlkHD_gAGkFTHNBr24M45TuezvYGL7tFHZD6ncxnaIbNu-pD_Ggu0_bp53d2nHjBncjZt72o0tOuxDN8rGpnrPVy1NdPayygCSnDL0sSpJE6J2R2hbkUVnSGtrOQOcUWulbAyVozUxYAqvSkPTctYpJLcTdbzY459b7GLY2fq1Pf6gfpABLAA</recordid><startdate>200906</startdate><enddate>200906</enddate><creator>Chibahara, H.</creator><creator>Korogi, H.</creator><creator>Ono, Y.</creator><creator>Saito, T.</creator><creator>Yoshikawa, K.</creator><creator>Yonekura, K.</creator><creator>Furuhashi, T.</creator><creator>Tomita, K.</creator><creator>Sakaue, H.</creator><creator>Ueki, A.</creator><creator>Matsumoto, S.</creator><creator>Akazawa, M.</creator><creator>Miyatake, H.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200906</creationdate><title>Resist planarization for trench first dual damascene</title><author>Chibahara, H. ; Korogi, H. ; Ono, Y. ; Saito, T. ; Yoshikawa, K. ; Yonekura, K. ; Furuhashi, T. ; Tomita, K. ; Sakaue, H. ; Ueki, A. ; Matsumoto, S. ; Akazawa, M. ; Miyatake, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i241t-2f16741442fe815a64f23a4550bd80de32a1fb807055994270937841f9db3943</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Chemicals</topic><topic>Cities and towns</topic><topic>Dielectrics</topic><topic>Dry etching</topic><topic>Lithography</topic><topic>Planarization</topic><topic>Resists</topic><topic>Slurries</topic><topic>Strips</topic><topic>Wet etching</topic><toplevel>online_resources</toplevel><creatorcontrib>Chibahara, H.</creatorcontrib><creatorcontrib>Korogi, H.</creatorcontrib><creatorcontrib>Ono, Y.</creatorcontrib><creatorcontrib>Saito, T.</creatorcontrib><creatorcontrib>Yoshikawa, K.</creatorcontrib><creatorcontrib>Yonekura, K.</creatorcontrib><creatorcontrib>Furuhashi, T.</creatorcontrib><creatorcontrib>Tomita, K.</creatorcontrib><creatorcontrib>Sakaue, H.</creatorcontrib><creatorcontrib>Ueki, A.</creatorcontrib><creatorcontrib>Matsumoto, S.</creatorcontrib><creatorcontrib>Akazawa, M.</creatorcontrib><creatorcontrib>Miyatake, H.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chibahara, H.</au><au>Korogi, H.</au><au>Ono, Y.</au><au>Saito, T.</au><au>Yoshikawa, K.</au><au>Yonekura, K.</au><au>Furuhashi, T.</au><au>Tomita, K.</au><au>Sakaue, H.</au><au>Ueki, A.</au><au>Matsumoto, S.</au><au>Akazawa, M.</au><au>Miyatake, H.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Resist planarization for trench first dual damascene</atitle><btitle>2009 IEEE International Interconnect Technology Conference</btitle><stitle>IITC</stitle><date>2009-06</date><risdate>2009</risdate><spage>98</spage><epage>100</epage><pages>98-100</pages><issn>2380-632X</issn><eissn>2380-6338</eissn><isbn>9781424444922</isbn><isbn>1424444926</isbn><eisbn>9781424444939</eisbn><eisbn>1424444934</eisbn><abstract>Resist planarization is applied to trench first dual damascene process in order to enhance focus margin for via lithography after hard mask etch. As a planarization process, resist CMP is better than conventional resist etch back, However, hard mask (HM) erosion by resist CMP causes serious problem of lessened thickness of Cu. To solve it, the combination of CMP and etch back (C+E) is adopted. This method realizes enhancement of the focus margin and prevention from the hard mask erosion at the same time.</abstract><pub>IEEE</pub><doi>10.1109/IITC.2009.5090351</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 2380-632X |
| ispartof | 2009 IEEE International Interconnect Technology Conference, 2009, p.98-100 |
| issn | 2380-632X 2380-6338 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Chemicals Cities and towns Dielectrics Dry etching Lithography Planarization Resists Slurries Strips Wet etching |
| title | Resist planarization for trench first dual damascene |
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