Copper contact metallization for 22 nm and beyond

We used Cu contact metallization to solve one of the critical challenges for 22 nm node technology. Cu contact metallization allowed us to demonstrate world's smallest and fully functional 22 nm node 6T-SRAM . Cu contact metallization was executed using CVD Ru-containing liner. We obtained earl...

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Bibliographische Detailangaben

Hauptverfasser:	Soon-Cheon Seo, Chih-Chao Yang, Chun-Chen Yeh, Haran, B., Horak, D., Fan, S., Koburger, C., Canaperi, D., Papa Rao, S.S., Monsieur, F., Knorr, A., Kerber, A., Chao-Kun Hu, Kelly, J., Tuan Vo, Cummings, J., Smalleya, M., Petrillo, K., Mehta, S., Schmitz, S., Levin, T., Dae-Guy Park, Stathis, J.H., Spooner, T., Paruchuri, V., Wynne, J., Edelstein, D., McHerron, D., Doris, B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Capacitance Chaos Contact resistance Copper Leakage current Metallization Microelectronics Thermal stresses Tungsten
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