Copper contact metallization for 22 nm and beyond
We used Cu contact metallization to solve one of the critical challenges for 22 nm node technology. Cu contact metallization allowed us to demonstrate world's smallest and fully functional 22 nm node 6T-SRAM . Cu contact metallization was executed using CVD Ru-containing liner. We obtained earl...
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| creator | Soon-Cheon Seo Chih-Chao Yang Chun-Chen Yeh Haran, B. Horak, D. Fan, S. Koburger, C. Canaperi, D. Papa Rao, S.S. Monsieur, F. Knorr, A. Kerber, A. Chao-Kun Hu Kelly, J. Tuan Vo Cummings, J. Smalleya, M. Petrillo, K. Mehta, S. Schmitz, S. Levin, T. Dae-Guy Park Stathis, J.H. Spooner, T. Paruchuri, V. Wynne, J. Edelstein, D. McHerron, D. Doris, B. |
| description | We used Cu contact metallization to solve one of the critical challenges for 22 nm node technology. Cu contact metallization allowed us to demonstrate world's smallest and fully functional 22 nm node 6T-SRAM . Cu contact metallization was executed using CVD Ru-containing liner. We obtained early reliability data by thermally stressing bulk device. Bulk device parameters such as junction and gate leakage currents and overlap capacitance were stable after BEOL anneal stress. We also demonstrated the extendibility of Cu contact metallization using 15 nm contacts. |
| doi_str_mv | 10.1109/IITC.2009.5090326 |
| format | Conference Proceeding |
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Cu contact metallization allowed us to demonstrate world's smallest and fully functional 22 nm node 6T-SRAM . Cu contact metallization was executed using CVD Ru-containing liner. We obtained early reliability data by thermally stressing bulk device. Bulk device parameters such as junction and gate leakage currents and overlap capacitance were stable after BEOL anneal stress. 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Cu contact metallization allowed us to demonstrate world's smallest and fully functional 22 nm node 6T-SRAM . Cu contact metallization was executed using CVD Ru-containing liner. We obtained early reliability data by thermally stressing bulk device. Bulk device parameters such as junction and gate leakage currents and overlap capacitance were stable after BEOL anneal stress. We also demonstrated the extendibility of Cu contact metallization using 15 nm contacts.</description><subject>Annealing</subject><subject>Capacitance</subject><subject>Chaos</subject><subject>Contact resistance</subject><subject>Copper</subject><subject>Leakage current</subject><subject>Metallization</subject><subject>Microelectronics</subject><subject>Thermal stresses</subject><subject>Tungsten</subject><issn>2380-632X</issn><issn>2380-6338</issn><isbn>9781424444922</isbn><isbn>1424444926</isbn><isbn>9781424444939</isbn><isbn>1424444934</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkEtLw0AcxNdHwVrzAcTLfoGk-979HyVYDRS8tOCt7BMieZHkUj-9EYvgXOYw8JthEHqkpKCUwLaqDmXBCIFCEiCcqSuUgTZUMLEIOFyjNeOG5Ipzc_MvY-z2L2MfK3T_g1kYEsQdyqbpkywSkhMQa0TLfhjiiH3fzdbPuI2zbZr6y8513-HUj5gx3LXYdgG7eO678IBWyTZTzC6-Qcfdy6F8y_fvr1X5vM9rquWcGyJcCjQS551J2hkZvV6KFdPJJm-dNUoGDiKxtOwEEZSWQhlwPghPI9-gp19uHWM8DWPd2vF8urzBvwHi1UtN</recordid><startdate>200906</startdate><enddate>200906</enddate><creator>Soon-Cheon Seo</creator><creator>Chih-Chao Yang</creator><creator>Chun-Chen Yeh</creator><creator>Haran, B.</creator><creator>Horak, D.</creator><creator>Fan, S.</creator><creator>Koburger, C.</creator><creator>Canaperi, D.</creator><creator>Papa Rao, S.S.</creator><creator>Monsieur, F.</creator><creator>Knorr, A.</creator><creator>Kerber, A.</creator><creator>Chao-Kun Hu</creator><creator>Kelly, J.</creator><creator>Tuan Vo</creator><creator>Cummings, J.</creator><creator>Smalleya, M.</creator><creator>Petrillo, K.</creator><creator>Mehta, S.</creator><creator>Schmitz, S.</creator><creator>Levin, T.</creator><creator>Dae-Guy Park</creator><creator>Stathis, J.H.</creator><creator>Spooner, T.</creator><creator>Paruchuri, V.</creator><creator>Wynne, J.</creator><creator>Edelstein, D.</creator><creator>McHerron, D.</creator><creator>Doris, B.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200906</creationdate><title>Copper contact metallization for 22 nm and beyond</title><author>Soon-Cheon Seo ; Chih-Chao Yang ; Chun-Chen Yeh ; Haran, B. ; Horak, D. ; Fan, S. ; Koburger, C. ; Canaperi, D. ; Papa Rao, S.S. ; Monsieur, F. ; Knorr, A. ; Kerber, A. ; Chao-Kun Hu ; Kelly, J. ; Tuan Vo ; Cummings, J. ; Smalleya, M. ; Petrillo, K. ; Mehta, S. ; Schmitz, S. ; Levin, T. ; Dae-Guy Park ; Stathis, J.H. ; Spooner, T. ; Paruchuri, V. ; Wynne, J. ; Edelstein, D. ; McHerron, D. ; Doris, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-804bfd1e0bcb8f7b85ec7000627fafcaba865d394f2f63294d6754689bcd4c1e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Annealing</topic><topic>Capacitance</topic><topic>Chaos</topic><topic>Contact resistance</topic><topic>Copper</topic><topic>Leakage current</topic><topic>Metallization</topic><topic>Microelectronics</topic><topic>Thermal stresses</topic><topic>Tungsten</topic><toplevel>online_resources</toplevel><creatorcontrib>Soon-Cheon Seo</creatorcontrib><creatorcontrib>Chih-Chao Yang</creatorcontrib><creatorcontrib>Chun-Chen Yeh</creatorcontrib><creatorcontrib>Haran, B.</creatorcontrib><creatorcontrib>Horak, D.</creatorcontrib><creatorcontrib>Fan, S.</creatorcontrib><creatorcontrib>Koburger, C.</creatorcontrib><creatorcontrib>Canaperi, D.</creatorcontrib><creatorcontrib>Papa Rao, S.S.</creatorcontrib><creatorcontrib>Monsieur, F.</creatorcontrib><creatorcontrib>Knorr, A.</creatorcontrib><creatorcontrib>Kerber, A.</creatorcontrib><creatorcontrib>Chao-Kun Hu</creatorcontrib><creatorcontrib>Kelly, J.</creatorcontrib><creatorcontrib>Tuan Vo</creatorcontrib><creatorcontrib>Cummings, J.</creatorcontrib><creatorcontrib>Smalleya, M.</creatorcontrib><creatorcontrib>Petrillo, K.</creatorcontrib><creatorcontrib>Mehta, S.</creatorcontrib><creatorcontrib>Schmitz, S.</creatorcontrib><creatorcontrib>Levin, T.</creatorcontrib><creatorcontrib>Dae-Guy Park</creatorcontrib><creatorcontrib>Stathis, J.H.</creatorcontrib><creatorcontrib>Spooner, T.</creatorcontrib><creatorcontrib>Paruchuri, V.</creatorcontrib><creatorcontrib>Wynne, J.</creatorcontrib><creatorcontrib>Edelstein, D.</creatorcontrib><creatorcontrib>McHerron, D.</creatorcontrib><creatorcontrib>Doris, B.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Soon-Cheon Seo</au><au>Chih-Chao Yang</au><au>Chun-Chen Yeh</au><au>Haran, B.</au><au>Horak, D.</au><au>Fan, S.</au><au>Koburger, C.</au><au>Canaperi, D.</au><au>Papa Rao, S.S.</au><au>Monsieur, F.</au><au>Knorr, A.</au><au>Kerber, A.</au><au>Chao-Kun Hu</au><au>Kelly, J.</au><au>Tuan Vo</au><au>Cummings, J.</au><au>Smalleya, M.</au><au>Petrillo, K.</au><au>Mehta, S.</au><au>Schmitz, S.</au><au>Levin, T.</au><au>Dae-Guy Park</au><au>Stathis, J.H.</au><au>Spooner, T.</au><au>Paruchuri, V.</au><au>Wynne, J.</au><au>Edelstein, D.</au><au>McHerron, D.</au><au>Doris, B.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Copper contact metallization for 22 nm and beyond</atitle><btitle>2009 IEEE International Interconnect Technology Conference</btitle><stitle>IITC</stitle><date>2009-06</date><risdate>2009</risdate><spage>8</spage><epage>10</epage><pages>8-10</pages><issn>2380-632X</issn><eissn>2380-6338</eissn><isbn>9781424444922</isbn><isbn>1424444926</isbn><eisbn>9781424444939</eisbn><eisbn>1424444934</eisbn><abstract>We used Cu contact metallization to solve one of the critical challenges for 22 nm node technology. Cu contact metallization allowed us to demonstrate world's smallest and fully functional 22 nm node 6T-SRAM . Cu contact metallization was executed using CVD Ru-containing liner. We obtained early reliability data by thermally stressing bulk device. Bulk device parameters such as junction and gate leakage currents and overlap capacitance were stable after BEOL anneal stress. We also demonstrated the extendibility of Cu contact metallization using 15 nm contacts.</abstract><pub>IEEE</pub><doi>10.1109/IITC.2009.5090326</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 2380-632X |
| ispartof | 2009 IEEE International Interconnect Technology Conference, 2009, p.8-10 |
| issn | 2380-632X 2380-6338 |
| language | eng |
| recordid | cdi_ieee_primary_5090326 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Capacitance Chaos Contact resistance Copper Leakage current Metallization Microelectronics Thermal stresses Tungsten |
| title | Copper contact metallization for 22 nm and beyond |
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