High power V-band power amplifier using PHEMT technology
A millimeter wave power amplifier has been developed using power MMIC based on 0.15 Micron T gate pseudomorphic HEMT technology. A basic building block power module with 700 mW of output power has been demonstrated which covers 59.5 to 63.5 GHz. Eight such modules have been power combined using a no...
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| container_end_page | 48 vol.1 |
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| creator | Goel, J. Onak, G. Stones, D.I. Yamauchi, D. Sharma, A. Tan, K. Mancini, J. |
| description | A millimeter wave power amplifier has been developed using power MMIC based on 0.15 Micron T gate pseudomorphic HEMT technology. A basic building block power module with 700 mW of output power has been demonstrated which covers 59.5 to 63.5 GHz. Eight such modules have been power combined using a novel Radial combiner to achieve 3.8 Watt output power level with more than 31 dB gain. This is the highest V-band power reported in the literature to date. With the demonstration of the low loss power combining schemes and the basic building block power module, levels of up to 10.0 Watts can be easily achieved by using higher order of combining. |
| doi_str_mv | 10.1109/MWSYM.1996.508459 |
| format | Conference Proceeding |
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A basic building block power module with 700 mW of output power has been demonstrated which covers 59.5 to 63.5 GHz. Eight such modules have been power combined using a novel Radial combiner to achieve 3.8 Watt output power level with more than 31 dB gain. This is the highest V-band power reported in the literature to date. With the demonstration of the low loss power combining schemes and the basic building block power module, levels of up to 10.0 Watts can be easily achieved by using higher order of combining.</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 0780332466</identifier><identifier>ISBN: 9780780332461</identifier><identifier>EISSN: 2576-7216</identifier><identifier>DOI: 10.1109/MWSYM.1996.508459</identifier><language>eng</language><publisher>IEEE</publisher><subject>Frequency ; Gain ; HEMTs ; High power amplifiers ; Millimeter wave technology ; MMICs ; Multichip modules ; PHEMTs ; Power generation ; Space technology</subject><ispartof>1996 IEEE MTT-S International Microwave Symposium Digest, 1996, Vol.1, p.45-48 vol.1</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/508459$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/508459$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Goel, J.</creatorcontrib><creatorcontrib>Onak, G.</creatorcontrib><creatorcontrib>Stones, D.I.</creatorcontrib><creatorcontrib>Yamauchi, D.</creatorcontrib><creatorcontrib>Sharma, A.</creatorcontrib><creatorcontrib>Tan, K.</creatorcontrib><creatorcontrib>Mancini, J.</creatorcontrib><title>High power V-band power amplifier using PHEMT technology</title><title>1996 IEEE MTT-S International Microwave Symposium Digest</title><addtitle>MWSYM</addtitle><description>A millimeter wave power amplifier has been developed using power MMIC based on 0.15 Micron T gate pseudomorphic HEMT technology. A basic building block power module with 700 mW of output power has been demonstrated which covers 59.5 to 63.5 GHz. Eight such modules have been power combined using a novel Radial combiner to achieve 3.8 Watt output power level with more than 31 dB gain. This is the highest V-band power reported in the literature to date. With the demonstration of the low loss power combining schemes and the basic building block power module, levels of up to 10.0 Watts can be easily achieved by using higher order of combining.</description><subject>Frequency</subject><subject>Gain</subject><subject>HEMTs</subject><subject>High power amplifiers</subject><subject>Millimeter wave technology</subject><subject>MMICs</subject><subject>Multichip modules</subject><subject>PHEMTs</subject><subject>Power generation</subject><subject>Space technology</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>0780332466</isbn><isbn>9780780332461</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tKw0AYhQcvYFr7ALrKC0yc--RfSqlGaKhgva3KJPknHUmTkFSkb2-hPZvznc0Hh5A7zhLOGTzkn2_fecIBTKJZqjRckEhoa6gV3FySCbMpk1IoY65IxLgCapT-uiGzcfxhxyithYaIpFmot3Hf_eEQf9DCtdV5uF3fBB-O9DuGto5fs0W-jvdYbtuu6erDLbn2rhlxdu4peX9arOcZXa6eX-aPSxq4FXsq0DsPUJWVsSidZB4RvLJYoWWoi0IrmXLtOOPgJS_BCydUYZixwpcC5JTcn7wBETf9EHZuOGxOn-U_Hh1Ihg</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Goel, J.</creator><creator>Onak, G.</creator><creator>Stones, D.I.</creator><creator>Yamauchi, D.</creator><creator>Sharma, A.</creator><creator>Tan, K.</creator><creator>Mancini, J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>High power V-band power amplifier using PHEMT technology</title><author>Goel, J. ; Onak, G. ; Stones, D.I. ; Yamauchi, D. ; Sharma, A. ; Tan, K. ; Mancini, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-2efaf99dcd67e3a30fee9f47ede70e5bb543815a1019f31c9f2a24b60672fc293</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Frequency</topic><topic>Gain</topic><topic>HEMTs</topic><topic>High power amplifiers</topic><topic>Millimeter wave technology</topic><topic>MMICs</topic><topic>Multichip modules</topic><topic>PHEMTs</topic><topic>Power generation</topic><topic>Space technology</topic><toplevel>online_resources</toplevel><creatorcontrib>Goel, J.</creatorcontrib><creatorcontrib>Onak, G.</creatorcontrib><creatorcontrib>Stones, D.I.</creatorcontrib><creatorcontrib>Yamauchi, D.</creatorcontrib><creatorcontrib>Sharma, A.</creatorcontrib><creatorcontrib>Tan, K.</creatorcontrib><creatorcontrib>Mancini, J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Goel, J.</au><au>Onak, G.</au><au>Stones, D.I.</au><au>Yamauchi, D.</au><au>Sharma, A.</au><au>Tan, K.</au><au>Mancini, J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>High power V-band power amplifier using PHEMT technology</atitle><btitle>1996 IEEE MTT-S International Microwave Symposium Digest</btitle><stitle>MWSYM</stitle><date>1996</date><risdate>1996</risdate><volume>1</volume><spage>45</spage><epage>48 vol.1</epage><pages>45-48 vol.1</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>0780332466</isbn><isbn>9780780332461</isbn><abstract>A millimeter wave power amplifier has been developed using power MMIC based on 0.15 Micron T gate pseudomorphic HEMT technology. A basic building block power module with 700 mW of output power has been demonstrated which covers 59.5 to 63.5 GHz. Eight such modules have been power combined using a novel Radial combiner to achieve 3.8 Watt output power level with more than 31 dB gain. This is the highest V-band power reported in the literature to date. With the demonstration of the low loss power combining schemes and the basic building block power module, levels of up to 10.0 Watts can be easily achieved by using higher order of combining.</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.1996.508459</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0149-645X |
| ispartof | 1996 IEEE MTT-S International Microwave Symposium Digest, 1996, Vol.1, p.45-48 vol.1 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_ieee_primary_508459 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Frequency Gain HEMTs High power amplifiers Millimeter wave technology MMICs Multichip modules PHEMTs Power generation Space technology |
| title | High power V-band power amplifier using PHEMT technology |
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