Noise in distributed MESFET preamplifiers
The theory of noise in a distributed MESFET preamplifier is developed. From this, it is shown that the equivalent input noise current density of a distributed preamplifier of an optical receiver can be improved by using large gate line matching impedance and appropriate scaling of the MESFET width....
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| Veröffentlicht in: | IEEE journal of solid-state circuits 1996-08, Vol.31 (8), p.1100-1111 |
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| container_end_page | 1111 |
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| container_issue | 8 |
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| container_title | IEEE journal of solid-state circuits |
| container_volume | 31 |
| creator | Freundorfer, A.P. Nguyen, T.L. |
| description | The theory of noise in a distributed MESFET preamplifier is developed. From this, it is shown that the equivalent input noise current density of a distributed preamplifier of an optical receiver can be improved by using large gate line matching impedance and appropriate scaling of the MESFET width. A front-end tuning circuit was designed using filter theory to further improve the noise performance of the preamplifier. A monolithic GaAs MESFET distributed preamplifier was fabricated with on chip front-end tuning components. Using a 35 /spl mu/m InGaAs p-i-n photodiode, the preamplifier was shown to have an equivalent input noise current density of 8 pA//spl radic/Hz and an 8 GHz bandwidth. To date, this is the best known result for a 0.8 /spl mu/m GaAs MESFET process. |
| doi_str_mv | 10.1109/4.508257 |
| format | Article |
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From this, it is shown that the equivalent input noise current density of a distributed preamplifier of an optical receiver can be improved by using large gate line matching impedance and appropriate scaling of the MESFET width. A front-end tuning circuit was designed using filter theory to further improve the noise performance of the preamplifier. A monolithic GaAs MESFET distributed preamplifier was fabricated with on chip front-end tuning components. Using a 35 /spl mu/m InGaAs p-i-n photodiode, the preamplifier was shown to have an equivalent input noise current density of 8 pA//spl radic/Hz and an 8 GHz bandwidth. To date, this is the best known result for a 0.8 /spl mu/m GaAs MESFET process.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/4.508257</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuit noise ; Circuit optimization ; Current density ; Gallium arsenide ; Impedance ; MESFETs ; Optical noise ; Optical receivers ; Optical tuning ; Preamplifiers</subject><ispartof>IEEE journal of solid-state circuits, 1996-08, Vol.31 (8), p.1100-1111</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c306t-449a5cc479232f1da63ffbea0d127bbc7a2600c151407f29522b0827e606c01a3</citedby><cites>FETCH-LOGICAL-c306t-449a5cc479232f1da63ffbea0d127bbc7a2600c151407f29522b0827e606c01a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/508257$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/508257$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Freundorfer, A.P.</creatorcontrib><creatorcontrib>Nguyen, T.L.</creatorcontrib><title>Noise in distributed MESFET preamplifiers</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>The theory of noise in a distributed MESFET preamplifier is developed. From this, it is shown that the equivalent input noise current density of a distributed preamplifier of an optical receiver can be improved by using large gate line matching impedance and appropriate scaling of the MESFET width. A front-end tuning circuit was designed using filter theory to further improve the noise performance of the preamplifier. A monolithic GaAs MESFET distributed preamplifier was fabricated with on chip front-end tuning components. Using a 35 /spl mu/m InGaAs p-i-n photodiode, the preamplifier was shown to have an equivalent input noise current density of 8 pA//spl radic/Hz and an 8 GHz bandwidth. To date, this is the best known result for a 0.8 /spl mu/m GaAs MESFET process.</description><subject>Circuit noise</subject><subject>Circuit optimization</subject><subject>Current density</subject><subject>Gallium arsenide</subject><subject>Impedance</subject><subject>MESFETs</subject><subject>Optical noise</subject><subject>Optical receivers</subject><subject>Optical tuning</subject><subject>Preamplifiers</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNqF0E1LxDAQBuAgCtZV8OypJ9FD10maj-Yoy_oBqx5U8BbSdAKRdluT7sF_b6WLV0_DMA8zw0vIOYUlpaBv-FJAxYQ6IBkVoiqoKj8OSQZAq0IzgGNyktLn1HJe0YxcP_chYR62eRPSGEO9G7HJn9avd-u3fIhou6ENPmBMp-TI2zbh2b4uyPtkVg_F5uX-cXW7KVwJciw411Y4x5VmJfO0sbL0vkYLDWWqrp2yTAI4KigH5ZkWjNXTwwolSAfUlgtyOe8dYv-1wzSaLiSHbWu32O-SYRVXjGn9P5TTJSbVBK9m6GKfUkRvhhg6G78NBfMbmuFmDm2iFzMNiPjH9sMfFPNkWg</recordid><startdate>19960801</startdate><enddate>19960801</enddate><creator>Freundorfer, A.P.</creator><creator>Nguyen, T.L.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7SP</scope></search><sort><creationdate>19960801</creationdate><title>Noise in distributed MESFET preamplifiers</title><author>Freundorfer, A.P. ; Nguyen, T.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c306t-449a5cc479232f1da63ffbea0d127bbc7a2600c151407f29522b0827e606c01a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Circuit noise</topic><topic>Circuit optimization</topic><topic>Current density</topic><topic>Gallium arsenide</topic><topic>Impedance</topic><topic>MESFETs</topic><topic>Optical noise</topic><topic>Optical receivers</topic><topic>Optical tuning</topic><topic>Preamplifiers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Freundorfer, A.P.</creatorcontrib><creatorcontrib>Nguyen, T.L.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Freundorfer, A.P.</au><au>Nguyen, T.L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Noise in distributed MESFET preamplifiers</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>1996-08-01</date><risdate>1996</risdate><volume>31</volume><issue>8</issue><spage>1100</spage><epage>1111</epage><pages>1100-1111</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>The theory of noise in a distributed MESFET preamplifier is developed. From this, it is shown that the equivalent input noise current density of a distributed preamplifier of an optical receiver can be improved by using large gate line matching impedance and appropriate scaling of the MESFET width. A front-end tuning circuit was designed using filter theory to further improve the noise performance of the preamplifier. A monolithic GaAs MESFET distributed preamplifier was fabricated with on chip front-end tuning components. Using a 35 /spl mu/m InGaAs p-i-n photodiode, the preamplifier was shown to have an equivalent input noise current density of 8 pA//spl radic/Hz and an 8 GHz bandwidth. To date, this is the best known result for a 0.8 /spl mu/m GaAs MESFET process.</abstract><pub>IEEE</pub><doi>10.1109/4.508257</doi><tpages>12</tpages></addata></record> |
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| identifier | ISSN: 0018-9200 |
| ispartof | IEEE journal of solid-state circuits, 1996-08, Vol.31 (8), p.1100-1111 |
| issn | 0018-9200 1558-173X |
| language | eng |
| recordid | cdi_ieee_primary_508257 |
| source | IEEE Electronic Library (IEL) |
| subjects | Circuit noise Circuit optimization Current density Gallium arsenide Impedance MESFETs Optical noise Optical receivers Optical tuning Preamplifiers |
| title | Noise in distributed MESFET preamplifiers |
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