A method to improve spectral resolution in planar semiconductor gamma-ray detectors
This paper describes an empirically derived algorithm to compensate for charge trapping in CdTe, CdZnTe, and other planar semiconductor detectors. The method is demonstrated to be an improvement over available systems, and application to experimental data is shown.
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| Veröffentlicht in: | IEEE Transactions on Nuclear Science 1996-06, Vol.43 (3), p.1365-1368 |
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| container_end_page | 1368 |
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| container_issue | 3 |
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| container_title | IEEE Transactions on Nuclear Science |
| container_volume | 43 |
| creator | Keele, B.D. Addleman, R.S. Troyer, G.L. |
| description | This paper describes an empirically derived algorithm to compensate for charge trapping in CdTe, CdZnTe, and other planar semiconductor detectors. The method is demonstrated to be an improvement over available systems, and application to experimental data is shown. |
| doi_str_mv | 10.1109/23.507066 |
| format | Article |
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The method is demonstrated to be an improvement over available systems, and application to experimental data is shown.</description><subject>CDTE SEMICONDUCTOR DETECTORS</subject><subject>Coaxial components</subject><subject>Costs</subject><subject>Electron traps</subject><subject>ENERGY SPECTRA</subject><subject>GAMMA DETECTION</subject><subject>Gamma ray detection</subject><subject>Gamma ray detectors</subject><subject>GAMMA SPECTROSCOPY</subject><subject>INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS</subject><subject>Instruments</subject><subject>Partial response channels</subject><subject>PULSE CIRCUITS</subject><subject>PULSE RISE TIME</subject><subject>Pulse shaping methods</subject><subject>Region 1</subject><subject>SEMICONDUCTOR DETECTORS</subject><subject>Shape</subject><subject>ZINC TELLURIDES</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNo9kLtPwzAQxi0EEqUwsDKZBYkhxZeHY49VxUuqxADMlutcqVESB9tB6n-Pq1RM9_rp7vuOkGtgCwAmH_JiUbGacX5CZlBVIoOqFqdkxhiITJZSnpOLEL5TWVasmpH3Je0w7lxDo6O2G7z7RRoGNNHrlnoMrh2jdT21PR1a3WtPA3bWuL4ZTXSefumu05nXe9pgxEMrXJKzrW4DXh3jnHw-PX6sXrL12_PrarnOTFGImOlSQkpgoxujESQ3AnKDheESKg2lNrXgwCCXhkmWCK6lxqasRcE2vOHFnNxOe12IVgVj0_1dUtYnGSqva16zxNxNTHL2M2KIqrPBYJusoBuDykUJss5FAu8n0HgXgsetGrzttN8rYOrwWpUXanptYm8m1iLiP3cc_gHbfHPM</recordid><startdate>19960601</startdate><enddate>19960601</enddate><creator>Keele, B.D.</creator><creator>Addleman, R.S.</creator><creator>Troyer, G.L.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19960601</creationdate><title>A method to improve spectral resolution in planar semiconductor gamma-ray detectors</title><author>Keele, B.D. ; Addleman, R.S. ; Troyer, G.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-a4913381badcae196c812ce3c6915a14ac78610129c090ae16a9aed47830b6d63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>CDTE SEMICONDUCTOR DETECTORS</topic><topic>Coaxial components</topic><topic>Costs</topic><topic>Electron traps</topic><topic>ENERGY SPECTRA</topic><topic>GAMMA DETECTION</topic><topic>Gamma ray detection</topic><topic>Gamma ray detectors</topic><topic>GAMMA SPECTROSCOPY</topic><topic>INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS</topic><topic>Instruments</topic><topic>Partial response channels</topic><topic>PULSE CIRCUITS</topic><topic>PULSE RISE TIME</topic><topic>Pulse shaping methods</topic><topic>Region 1</topic><topic>SEMICONDUCTOR DETECTORS</topic><topic>Shape</topic><topic>ZINC TELLURIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Keele, B.D.</creatorcontrib><creatorcontrib>Addleman, R.S.</creatorcontrib><creatorcontrib>Troyer, G.L.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Nuclear Science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Keele, B.D.</au><au>Addleman, R.S.</au><au>Troyer, G.L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A method to improve spectral resolution in planar semiconductor gamma-ray detectors</atitle><jtitle>IEEE Transactions on Nuclear Science</jtitle><stitle>TNS</stitle><date>1996-06-01</date><risdate>1996</risdate><volume>43</volume><issue>3</issue><spage>1365</spage><epage>1368</epage><pages>1365-1368</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>This paper describes an empirically derived algorithm to compensate for charge trapping in CdTe, CdZnTe, and other planar semiconductor detectors. 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| identifier | ISSN: 0018-9499 |
| ispartof | IEEE Transactions on Nuclear Science, 1996-06, Vol.43 (3), p.1365-1368 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_ieee_primary_507066 |
| source | IEEE Electronic Library (IEL) |
| subjects | CDTE SEMICONDUCTOR DETECTORS Coaxial components Costs Electron traps ENERGY SPECTRA GAMMA DETECTION Gamma ray detection Gamma ray detectors GAMMA SPECTROSCOPY INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS Instruments Partial response channels PULSE CIRCUITS PULSE RISE TIME Pulse shaping methods Region 1 SEMICONDUCTOR DETECTORS Shape ZINC TELLURIDES |
| title | A method to improve spectral resolution in planar semiconductor gamma-ray detectors |
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