Piezoresistive properties of heavily doped P-type polysilicon films
The different thickness polysilicon films were prepared by low pressure chemical vapor deposition. The microstructures of samples were observed by X-ray diffraction, scanning electron microscope and transmission electron microscope. The piezoresistive properties of samples were tested. The experimen...
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| creator | Xuebin Lu Xiaowei Liu Rongyan Chuai Changzhi Shi Mingxue Huo Weiping Chen |
| description | The different thickness polysilicon films were prepared by low pressure chemical vapor deposition. The microstructures of samples were observed by X-ray diffraction, scanning electron microscope and transmission electron microscope. The piezoresistive properties of samples were tested. The experimental results show that under high doping concentration, the gauge factor of polysilicon nanofilms is larger than that of common polysilicon films, which can not be explained reasonably by existing piezoresistive theories, but can be well explained by tunneling piezoresistive theory. The experimental results imply that the polysilicon nanofilms is a promising high temperature piezoresistive material. |
| doi_str_mv | 10.1109/NEMS.2009.5068627 |
| format | Conference Proceeding |
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The microstructures of samples were observed by X-ray diffraction, scanning electron microscope and transmission electron microscope. The piezoresistive properties of samples were tested. The experimental results show that under high doping concentration, the gauge factor of polysilicon nanofilms is larger than that of common polysilicon films, which can not be explained reasonably by existing piezoresistive theories, but can be well explained by tunneling piezoresistive theory. The experimental results imply that the polysilicon nanofilms is a promising high temperature piezoresistive material.</description><identifier>ISBN: 9781424446292</identifier><identifier>ISBN: 1424446295</identifier><identifier>EISBN: 9781424446308</identifier><identifier>EISBN: 1424446309</identifier><identifier>DOI: 10.1109/NEMS.2009.5068627</identifier><language>eng</language><publisher>IEEE</publisher><subject>Chemical vapor deposition ; Doping ; Gauge factors ; Microstructure ; Nanofilms ; Piezoresistance ; Piezoresistive property ; Polysilicon ; Scanning electron microscopy ; Temperature ; Testing ; Transmission electron microscopy ; Tunneling ; Tunneling piezoresistive theory ; X-ray diffraction</subject><ispartof>2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2009, p.498-501</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c223t-69650ef5eb09ba02597a8b4046f5892341c5580a1ac1ed65c13c0899f3d682043</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5068627$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5068627$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Xuebin Lu</creatorcontrib><creatorcontrib>Xiaowei Liu</creatorcontrib><creatorcontrib>Rongyan Chuai</creatorcontrib><creatorcontrib>Changzhi Shi</creatorcontrib><creatorcontrib>Mingxue Huo</creatorcontrib><creatorcontrib>Weiping Chen</creatorcontrib><title>Piezoresistive properties of heavily doped P-type polysilicon films</title><title>2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems</title><addtitle>NEMS</addtitle><description>The different thickness polysilicon films were prepared by low pressure chemical vapor deposition. The microstructures of samples were observed by X-ray diffraction, scanning electron microscope and transmission electron microscope. The piezoresistive properties of samples were tested. The experimental results show that under high doping concentration, the gauge factor of polysilicon nanofilms is larger than that of common polysilicon films, which can not be explained reasonably by existing piezoresistive theories, but can be well explained by tunneling piezoresistive theory. The experimental results imply that the polysilicon nanofilms is a promising high temperature piezoresistive material.</description><subject>Chemical vapor deposition</subject><subject>Doping</subject><subject>Gauge factors</subject><subject>Microstructure</subject><subject>Nanofilms</subject><subject>Piezoresistance</subject><subject>Piezoresistive property</subject><subject>Polysilicon</subject><subject>Scanning electron microscopy</subject><subject>Temperature</subject><subject>Testing</subject><subject>Transmission electron microscopy</subject><subject>Tunneling</subject><subject>Tunneling piezoresistive theory</subject><subject>X-ray diffraction</subject><isbn>9781424446292</isbn><isbn>1424446295</isbn><isbn>9781424446308</isbn><isbn>1424446309</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpNj89KxDAYxCMiKGsfQLzkBVq__G1ylLLqwqoL6nlJ0y8Y6dqSlIX69Bbcg3MZfsMwMITcMKgYA3v3sn5-qziArRRoo3l9RgpbGya5lFILMOf_mVt-SYqcv2CRVAuaK9LsIv4MCXPMUzwiHdMwYpoiZjoE-onuGPuZdkvY0V05zeNSGfo5xz764ZuG2B_yNbkIrs9YnHxFPh7W781TuX193DT329JzLqZSW60Ag8IWbOuAK1s700qQOihjuZDMK2XAMecZdlp5JjwYa4PotOEgxYrc_u1GRNyPKR5cmven6-IX4gVMBA</recordid><startdate>200901</startdate><enddate>200901</enddate><creator>Xuebin Lu</creator><creator>Xiaowei Liu</creator><creator>Rongyan Chuai</creator><creator>Changzhi Shi</creator><creator>Mingxue Huo</creator><creator>Weiping Chen</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200901</creationdate><title>Piezoresistive properties of heavily doped P-type polysilicon films</title><author>Xuebin Lu ; Xiaowei Liu ; Rongyan Chuai ; Changzhi Shi ; Mingxue Huo ; Weiping Chen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c223t-69650ef5eb09ba02597a8b4046f5892341c5580a1ac1ed65c13c0899f3d682043</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Chemical vapor deposition</topic><topic>Doping</topic><topic>Gauge factors</topic><topic>Microstructure</topic><topic>Nanofilms</topic><topic>Piezoresistance</topic><topic>Piezoresistive property</topic><topic>Polysilicon</topic><topic>Scanning electron microscopy</topic><topic>Temperature</topic><topic>Testing</topic><topic>Transmission electron microscopy</topic><topic>Tunneling</topic><topic>Tunneling piezoresistive theory</topic><topic>X-ray diffraction</topic><toplevel>online_resources</toplevel><creatorcontrib>Xuebin Lu</creatorcontrib><creatorcontrib>Xiaowei Liu</creatorcontrib><creatorcontrib>Rongyan Chuai</creatorcontrib><creatorcontrib>Changzhi Shi</creatorcontrib><creatorcontrib>Mingxue Huo</creatorcontrib><creatorcontrib>Weiping Chen</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Xuebin Lu</au><au>Xiaowei Liu</au><au>Rongyan Chuai</au><au>Changzhi Shi</au><au>Mingxue Huo</au><au>Weiping Chen</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Piezoresistive properties of heavily doped P-type polysilicon films</atitle><btitle>2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems</btitle><stitle>NEMS</stitle><date>2009-01</date><risdate>2009</risdate><spage>498</spage><epage>501</epage><pages>498-501</pages><isbn>9781424446292</isbn><isbn>1424446295</isbn><eisbn>9781424446308</eisbn><eisbn>1424446309</eisbn><abstract>The different thickness polysilicon films were prepared by low pressure chemical vapor deposition. The microstructures of samples were observed by X-ray diffraction, scanning electron microscope and transmission electron microscope. The piezoresistive properties of samples were tested. The experimental results show that under high doping concentration, the gauge factor of polysilicon nanofilms is larger than that of common polysilicon films, which can not be explained reasonably by existing piezoresistive theories, but can be well explained by tunneling piezoresistive theory. The experimental results imply that the polysilicon nanofilms is a promising high temperature piezoresistive material.</abstract><pub>IEEE</pub><doi>10.1109/NEMS.2009.5068627</doi><tpages>4</tpages></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Chemical vapor deposition Doping Gauge factors Microstructure Nanofilms Piezoresistance Piezoresistive property Polysilicon Scanning electron microscopy Temperature Testing Transmission electron microscopy Tunneling Tunneling piezoresistive theory X-ray diffraction |
| title | Piezoresistive properties of heavily doped P-type polysilicon films |
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