Distributed small signal model for multi-fingered GaAs PHEMT/MESFET devices
A fully distributed equivalent circuit PHEMT and MESFET model is presented in closed form expressions for single finger end-fed FET geometry. The model includes self and mutual inductances and a new frequency dependent gate resistance. The model was used successfully to model multi-fingered devices...
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| creator | Nash, S.J. Platzker, A. Struble, W. |
| description | A fully distributed equivalent circuit PHEMT and MESFET model is presented in closed form expressions for single finger end-fed FET geometry. The model includes self and mutual inductances and a new frequency dependent gate resistance. The model was used successfully to model multi-fingered devices which were subjected to equi-phase gate and drain excitations. Comparisons between measured data and model results are shown to be in excellent agreement for all S-parameters to 50 GHz regardless of unit gate width. Scaling issues are also investigated for the new distributed model. |
| doi_str_mv | 10.1109/MCS.1996.506340 |
| format | Conference Proceeding |
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The model includes self and mutual inductances and a new frequency dependent gate resistance. The model was used successfully to model multi-fingered devices which were subjected to equi-phase gate and drain excitations. Comparisons between measured data and model results are shown to be in excellent agreement for all S-parameters to 50 GHz regardless of unit gate width. Scaling issues are also investigated for the new distributed model.</description><identifier>ISBN: 9780780333604</identifier><identifier>ISBN: 0780333608</identifier><identifier>DOI: 10.1109/MCS.1996.506340</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electrical resistance measurement ; Equivalent circuits ; FETs ; Fingers ; Frequency dependence ; Gallium arsenide ; Geometry ; MESFET circuits ; PHEMTs ; Solid modeling</subject><ispartof>IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. 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Digest of Papers</title><addtitle>MCS</addtitle><description>A fully distributed equivalent circuit PHEMT and MESFET model is presented in closed form expressions for single finger end-fed FET geometry. The model includes self and mutual inductances and a new frequency dependent gate resistance. The model was used successfully to model multi-fingered devices which were subjected to equi-phase gate and drain excitations. Comparisons between measured data and model results are shown to be in excellent agreement for all S-parameters to 50 GHz regardless of unit gate width. Scaling issues are also investigated for the new distributed model.</description><subject>Electrical resistance measurement</subject><subject>Equivalent circuits</subject><subject>FETs</subject><subject>Fingers</subject><subject>Frequency dependence</subject><subject>Gallium arsenide</subject><subject>Geometry</subject><subject>MESFET circuits</subject><subject>PHEMTs</subject><subject>Solid modeling</subject><isbn>9780780333604</isbn><isbn>0780333608</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj09Lw0AUxBdEUGrOgqf9Aknf9u2f5FhibcUGhdZz2WTflpVNK9lU8NsbqD8G5jDDwDD2KKAQAqp5U-8KUVW6UKBRwg3LKlPCJETUIO9YltIXTEgldGnu2dtzSOMQ2stIjqfexshTOJ5s5P3ZUeT-PPD-EseQ-3A60jC11naZ-Mdm1eznzWr3stpzRz-ho_TAbr2NibJ_n7HPKa03-fZ9_Vovt3kQIMdcK2FbgbiQvkOHlSihNVIpqwg0EEpqO-2rDq0x2sBCdt6TaSdQSqccztjTdTcQ0eF7CL0dfg_Xx_gHttJKZw</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Nash, S.J.</creator><creator>Platzker, A.</creator><creator>Struble, W.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>Distributed small signal model for multi-fingered GaAs PHEMT/MESFET devices</title><author>Nash, S.J. ; Platzker, A. ; Struble, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-651ab13324fc3d39180b7455a5e060e34ebc6f9c3a7767024cffe7bbbb344d5d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Electrical resistance measurement</topic><topic>Equivalent circuits</topic><topic>FETs</topic><topic>Fingers</topic><topic>Frequency dependence</topic><topic>Gallium arsenide</topic><topic>Geometry</topic><topic>MESFET circuits</topic><topic>PHEMTs</topic><topic>Solid modeling</topic><toplevel>online_resources</toplevel><creatorcontrib>Nash, S.J.</creatorcontrib><creatorcontrib>Platzker, A.</creatorcontrib><creatorcontrib>Struble, W.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nash, S.J.</au><au>Platzker, A.</au><au>Struble, W.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Distributed small signal model for multi-fingered GaAs PHEMT/MESFET devices</atitle><btitle>IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers</btitle><stitle>MCS</stitle><date>1996</date><risdate>1996</risdate><spage>219</spage><epage>222</epage><pages>219-222</pages><isbn>9780780333604</isbn><isbn>0780333608</isbn><abstract>A fully distributed equivalent circuit PHEMT and MESFET model is presented in closed form expressions for single finger end-fed FET geometry. The model includes self and mutual inductances and a new frequency dependent gate resistance. The model was used successfully to model multi-fingered devices which were subjected to equi-phase gate and drain excitations. Comparisons between measured data and model results are shown to be in excellent agreement for all S-parameters to 50 GHz regardless of unit gate width. Scaling issues are also investigated for the new distributed model.</abstract><pub>IEEE</pub><doi>10.1109/MCS.1996.506340</doi><tpages>4</tpages></addata></record> |
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| identifier | ISBN: 9780780333604 |
| ispartof | IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers, 1996, p.219-222 |
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| language | eng |
| recordid | cdi_ieee_primary_506340 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Electrical resistance measurement Equivalent circuits FETs Fingers Frequency dependence Gallium arsenide Geometry MESFET circuits PHEMTs Solid modeling |
| title | Distributed small signal model for multi-fingered GaAs PHEMT/MESFET devices |
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